Light-Emitting Device, Film-Forming Method and Manufacturing Apparatus Thereof, and Cleaning Method of the Manufacturing Apparatus

ABSTRACT

This invention provides a new film forming method in which, on the occasion that pressure is decreased by pressure decreasing means which was connected to a film forming chamber, and a film is formed by evaporating an organic compound material from a deposition source in the film forming chamber, minute amounts of gas (silane series gas) which comprises smaller particles than particles of the organic compound material, i.e., a material with a smaller atomic radius are flowed, and the material with a small atomic radius is made to be included in an organic compound film.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a divisional of U.S. application Ser. No.10/732,807, filed Dec. 11, 2003, now allowed, which claims the benefitof foreign priority applications filed in Japan as Serial No.2002-361320 on Dec. 12, 2002 and Serial No. 2002-379235 on Dec. 27,2002, all of which are incorporated by reference.

TECHNICAL FIELD

This invention relates a film forming apparatus, a manufacturingapparatus, a cleaning method, and a film forming method, which are usedfor film formation of a material which can be formed as a film bydeposition (hereinafter, referred to as a deposition material). Inparticular, this invention is a technology which is effective in case ofusing a material which includes an organic compound, as a depositionmaterial.

BACKGROUND ART

In recent years, research of a light emitting apparatus which used an ELdevice as a self-luminous type device has been intensified, and inparticular, a light emitting apparatus which used an organic material asthe EL material has been attracting attention. This light emittingapparatus is also called as an organic EL display or an organic lightemitting diode.

A light emitting apparatus has such a characteristic that there is noproblem of a view field angle since it is of a self-luminous type,unlike a liquid crystal display apparatus. That is, as a display whichis used out of doors, it is more suitable than a liquid crystal display,and uses in various forms have been proposed.

An EL device is of such a configuration that an EL layer was sandwichedbetween a pair of electrodes, and the EL layer is normally of alaminated configuration. Representatively, a laminated configuration of“a hole transport layer/a light emitting layer/an electron transportlayer” is cited. This configuration is of very high luminous efficiency,and most of the light emitting apparatuses, for which researches anddevelopments have been advanced at present, adopt this configuration.

The biggest problem in a practical application of an EL device is onsuch a point that life of the device is insufficient. Also,deterioration of the device appears in such a form that a non-luminousregion (dark spot) is broadened as it is made to emit light for a longtime, and as its cause, deterioration of the EL layer has become anissue.

An EL material, which forms the EL layer, is deteriorated by impuritiessuch as oxygen and water. In addition, it is also conceivable that otherimpurities are included in the EL material, which has an effect ondeterioration of the EL layer.

In addition, the EL material is broadly classified into a low molecularseries (monomer series) material and a high molecular series (polymerseries) material, and the low molecular series material among these isformed as a film, mainly by deposition. A vacuum deposition method inwhich a film is formed by evaporating an evaporation material from anevaporation source in vacuum is known as a representative example of aphysical film forming method. In addition, as a representative exampleof a chemical film forming method, known is CVD (Chemical VaporDeposition) in which a film is formed by supplying gas as material overa substrate and chemical reaction in gaseous phase or over the substratesurface.

On the occasion of carrying out film formation by a conventionaldeposition method, an evaporation material is used as it is, but it isconceivable that an impurity is mixed in an evaporation material at thetime of deposition. That is, there is such a possibility that oxygen,water and another impurity, which is one of deterioration causes of anEL device, are mixed in.

In addition, it is possible to heighten purity by having purified anevaporation material in advance, but there is also such a possibilitythat an impurity is mixed in during a period until it is evaporated.

An EL material is very easily deteriorated, and it is easily oxidizedand deteriorated due to existence of oxygen or water. On that account,it is impossible to carry out a photolithography process after filmformation, and in order to develop a certain pattern, there is such anecessity that a mask having an opening part (hereinafter, referred toas a deposition mask) is used and it is separated at the same time asfilm formation. Therefore, most of the sublimed organic EL materials areattached to a deposition mask or an anti-attachment shield (a protectionplate for preventing an evaporation material from being attached to aninner wall of a film forming chamber) in a film forming chamber.

DISCLOSURE OF THE INVENTION Problem that the Invention is to Solve

This invention is a thing which was made in view of the above-describedproblem, and has, as a problem, providing a film forming apparatus whichis of high throughput, and can form a high-density EL layer, and amanufacturing apparatus which has the film forming apparatus in onechamber. Further, it has, as a problem, providing a film forming methodwhich used the film forming apparatus.

Means for Solving the Problem

This invention provides such a new film forming method that, on theoccasion of evaporating an organic compound material from an evaporationsource to form a film, in a film forming chamber, with 5×10⁻³ Torr(0.665 Pa) or less, preferably, 1×10⁻³ Torr (0.133 Pa) or less, whichwas set by depressurizing means which was connected to a film formingchamber, gas, which comprises smaller particles than particles of theorganic compound material, i.e., a material with a small atomic radius,is flowed in minute amounts, and the material with a small atomic radiusis included in an organic compound film. This invention is characterizedto improve reliability by intentionally including an inorganic materialin the organic compound film.

That is, this invention forms a high-density film by intentionallyintroducing material gas at the time of film formation, and by includinga component of the material gas in the organic compound film, and blockssuch a thing that an impurity such as oxygen and moisture which inducesdeterioration is invaded and diffused in a film.

As the above-described material gas with a small atomic radius,concretely speaking, one kind or plural kinds, which were selected fromsilane series gas (monosilane, disilane, trisilane etc.), SiF₄, GeH₄,GeF₄, SnH₄, or hydro carbon series gas (CH₄, C₂H₂, C₂H₄, C₆H₆ etc.), maybe used. In passing, also included is mixed gas in which these gassesare diluted by hydrogen, argon and so on. As these gasses, which areintroduced into an apparatus, used is one which was highly purified by agas purification machine before it is introduced into an apparatus.Therefore, there is such a necessity that the gas purification machinehas been provided, in order for gas to be introduced after it was highlypurified. By this, since it is possible to remove a residual gaseousbody (oxygen, moisture and other impurities, and son on) which isincluded in gas, in advance, it is possible to prevent these impuritiesfrom being introduced into an apparatus inside.

For example, in case that there was a fault portion such as a pinholeand a short after Si was included in a film by introducing monosilanegas at the time of deposition and a light emitting device was finalized,the fault portion is heated and thereby, Si is reacted to form aninsulative insulator such as SiOx, SiCx, and leakage at a portion of apinhole and a short is reduced, and an advantage of self-heating, inwhich a point defect (a dark spot etc.) is not proceeded, is alsoobtained.

In addition, a component of a material gas, which was introduced byheating a substrate, may be effectively deposited over the substrate.

In addition, it may be radicalized by plasma generating means. Forexample, in case of monosilane, by plasma generating means, generated isan oxide silicon precursor such as SiHx, SiHxOy, SiOy, and these aredeposited on a substrate together with an organic compound material froman evaporation source. Monosilane is easily reacted with oxygen andmoisture, and it is possible to reduce an oxygen concentration and amoisture amount in a film forming chamber.

A configuration of this invention, which is disclosed in thisspecification, is a light emitting apparatus which was equipped with alight emitting device which has an anode over a substrate having aninsulation surface, a layer which includes an organic compound which isin contact with the anode, a cathode which is in contact with the layerincluding the organic compound, and a light emitting apparatuscharacterized in that, in the above described layer including theorganic compound, included is silicon with 1×10¹⁸-5×10²⁰ atoms/cm³,preferably 3×10¹⁸-3×10²⁰ atoms/cm³ by SIMS measurement.

In case that material gas is reacted with oxygen and moisture, likesilane series gas, it is possible to reduce an oxygen concentration anda moisture amount in a film forming chamber to obtain a highly reliableorganic compound film. In passing, as a plasma generation method, it ispossible to properly use ECR, ICP, helicon, magnetron, 2 frequency,triode or LEP etc.

Also, in this specification, a new film forming apparatus is provided.

A configuration with regard to a film forming apparatus of thisinvention is a film forming apparatus which deposits an organic compoundmaterial from an evaporation source which was placed opposite to asubstrate, and carries out film formation over the substrate, and a filmforming apparatus characterized in that, in a film forming chamber inwhich the substrate is placed, a deposition source which accommodatesthe organic compound material and means for heating the depositionsource are provided, and the film forming chamber is coupled to a vacuumpumping processing chamber which vacuates an inside of the film formingchamber, and has means which can introduce material gas.

In addition, by using the film forming apparatus of this invention, itis possible to make a multi-chamber system manufacturing apparatus, anda manufacturing apparatus of this invention is a manufacturing apparatuswhich has a load chamber, a transfer chamber which was coupled to theload chamber, and a film forming chamber which was coupled to thetransfer chamber, and a manufacturing apparatus characterized in thatthe transfer chamber has a function of carrying out alignment of a mask(deposition mask) and a substrate, and in the film forming chamber inwhich the substrate is placed, a deposition source which accommodates anorganic compound material and means for heating the deposition sourceare provided, and the film forming chamber is coupled to a vacuumpumping processing chamber which vacuates an inside of the film formingchamber, and has means which can introduce material gas.

In addition, by using the film forming apparatus of this invention, itis also possible to make an inline system manufacturing apparatus inwhich a load chamber, a transport chamber, and a film forming chamberare coupled in a serial direction, and its configuration is amanufacturing apparatus which has a load chamber, a transfer chamberwhich was coupled to the load chamber, and a film forming chamber whichwas coupled to the transfer chamber in a serial direction, and amanufacturing apparatus characterized in that the transfer chamber has afunction of carrying out alignment of a mask and a substrate, and in thefilm forming chamber in which the substrate is placed, a depositionsource which accommodates an organic compound material and means forheating the deposition source are provided, and the film forming chamberis coupled to a vacuum pumping processing chamber which vacuates aninside of the film forming chamber, and has means which can introducematerial gas.

In addition, in each configuration of the above-described film formingapparatus (and the manufacturing apparatus which was equipped with thefilm forming apparatus), it is characterized in that the depositionsource can be moved in a X direction or a Y direction in the filmforming chamber, on an even keel. In addition, on the occasion ofdeposition, a spacing distance d of a substrate and a deposition sourceholder is narrowed to representatively 30 cm or less, preferably, 20 cmor less, more preferably 5 cm-15 cm, to dramatically improve utilizationefficiency of a deposition material and throughput. The depositionsource holder is composed of a container (representatively, a crucible),a heater which was disposed outside the container through a heateven-out member, a heat insulating layer which was disposed outside thisheater, an outer tube which accommodates these, a cooling pipe which waswound around an outside of the outer tube, a deposition shutter whichopens and closes an opening part of the outer tube including an openingpart of the crucible, and a film thickness sensor.

In addition, it is desired that a deposition mask is made to be a metalmask which used a metal material which is hard to be deformed by heat(is of a low thermal expansion coefficient), and can bear withtemperature at the time of deposition (e.g., a high melting point metalsuch as tungsten, tantalum, chrome, nickel or molybdenum, or an alloywhich includes these elements, a material such as stainless, inconel,hastelloy. For example, cited are a low thermal expansion alloy ofnickel 42%, iron 58% (42 alloy), a thermal expansion coefficient ofwhich is close to a glass substrate (0.4×10⁻⁶-8.5×10⁻⁶), a low thermalexpansion alloy of nickel 36% (36 invar) and so on.

In addition, in each configuration of the above-described film formingapparatus (and the manufacturing apparatus which was equipped with thefilm forming apparatus), in the film forming chamber, means for heatingthe substrate may be provided. In addition, as means for heating thesubstrate, it is possible to heat by having a stage in which a heaterand a heating wire etc. were disposed (may have a function for fixingthe substrate), or a metal mask in which a heater and a heating wireetc. were disposed, closely contacted with or come close to thesubstrate, and it is possible to set temperature of the substrate to50-200° C., preferably 65-150° C. By heating the substrate, it ispossible for a component of the material gas to be easily imported in aorganic compound film.

In addition, in each configuration of the above-described film formingapparatus (and the manufacturing apparatus which was equipped with thefilm forming apparatus), it is characterized in that the above-describedmeans which can introduce the material gas is means for introducing amaterial gas which was radicalized by plasma generating means. Inaddition, separately from a system which introduces a material gas, asystem which introduces inert gas (nitrogen, argon, etc.) for making aninside of the film forming chamber at normal pressures may be provided.In addition, separately from a system which introduces a material gas, asystem which introduces cleaning gas (H₂, argon, NF₃ etc.) for cleaningan inside of the film forming chamber may be provided.

In addition, a configuration with regard to a cleaning method which isdisclosed in this specification is a cleaning method which removes anorganic compound which was attached to an inside of a film formingchamber which was equipped with a deposition source, and a cleaningmethod characterized in that an inner wall, or attachment preventionmeans which prevents a film from being formed on the inner wall, or amask is cleaned by generating plasma in an inside of the film formingchamber, or by introducing gas which was ionized by plasma, into theinside of the film forming chamber, and air discharge is carried out byvacuum pumping means.

In the above-described configuration, it is characterized that theplasma is generated by exciting one kind or plural kinds of gasses,which were selected from Ar, H, F, NF₃, or O.

In addition, it may be configured in such a manner that, at the time ofdeposition, plasma is formed by carrying out electric discharge by anantenna system in the film forming chamber, and a component of theionized material gas is chemically attached to the evaporated organiccompound.

In addition, in each configuration of the above-described film formingapparatus, the vacuum pumping means which is disposed so as to becoupled to the film forming chamber vacuates a level of 1 Pa from anatmospheric pressure by an oil-free dry pump, and vacuates a pressuremore than that by a magnetic levitation type turbo molecular pump or acomplex molecular pump. In the film forming chamber, for the purpose ofremoving moisture, a cryopump may be disposed in parallel. By doingthis, contamination due to an organic matter such as mainly, oil isprevented from pumping means. An inner wall surface is processed as amirror surface by electrolytic polishing, and a surface area is reducedso that gas discharge is prevented.

In addition, in the above-described each film forming apparatus, bydisposing a plurality of deposition sources in one film forming chamber,it is possible to form a plurality of functional regions, and a lightemitting device which has a mixed region, in the same film formingchamber. Therefore, in case that an organic compound film, which iscomposed of a plurality of functional regions, is formed between ananode and a cathode of a light emitting device, it is possible to form aconfiguration having a mixed region which is composed of both of amaterial which configures a first functional region, and a materialwhich configures a second functional region, between the firstfunctional region and the second functional region, but not aconventional laminated configuration in which a distinct boundary faceexists. By this invention, by having a component of material gasincluded in a film by introducing the material gas prior to filmformation, or during a period of film formation, it is possible to fitmore between molecules in the mixed region. By forming the mixed region,an energy barrier between functional regions is mitigated. Therefore,reduction of a drive voltage, and prevention of luminance loweringbecome possible.

In passing, a first organic compound and a second organic compound haveproperties which are selected from a group of a hole injection propertyfor accepting a hole from an anode, a hole transport property in whichhole mobility is larger than electron mobility, an electron transportproperty in which electron mobility is larger than hole mobility, anelectron injection property for accepting an electron from a cathode, ablocking property in which it is possible to block a move of a hole oran electron, and a light emission property for presenting lightemission, and they have the above-described properties which aredifferent from each other, respectively.

In passing, as an organic compound in which the hole injection propertyis high, a phthalocyanine series compound is preferable, and as anorganic compound in which the hole transport performance is high, aaromatic diamine compound is preferable, and in addition, as an organiccompound in which the electron transport property is high, a metalcomplex including a benzoquinoline bone structure, or an oxadiazolederivative, or triazole derivative, or a phenanthroline derivative ispreferable. Further, as an organic compound which presents lightemission, a metal complex including a quinoline bone structure, a metalcomplex including a benzoxazole bone structure, or a metal complexincluding a benzothiazole bone structure which respectively emits lightstably is preferable.

Further preferably, it is to configure a luminescent region by a hostmaterial, and a luminescent material (dopant) in which excitation energyis lower than the host material, and to design in such a manner thatexcitation energy of the dopant becomes lower than excitation energy ofa hole transport property region and excitation energy of an electrontransport layer. By this, it is possible to prevent diffusion ofmolecular exciters of the dopant, and to have the dopant emit lighteffectively. In addition, if the dopant is a carrier-trap type material,it is possible to also heighten recombination efficiency of a carrier.

In addition, it is assumed that such a case that a material, in whichtriplet excitation energy can be converted into light emission, wasadded to a mixed region as dopant is included in this invention. Inaddition, in forming the mixed region, concentration gradient may beapplied to the mixed region.

In passing, the film forming apparatus in this invention can be used notonly for film formation of an organic compound represented by an ELmaterial, but also for film formation of another material such as ametal material which is used for deposition.

In addition, in this specification, a new film forming method is alsoprovided.

A configuration with regard to a film forming method of this inventionis a film forming method for depositing an organic compound on asubstrate which is placed in a film forming chamber, and a film formingmethod characterized in that an inside of the film forming chamber ismade to be in higher vacuum than 1×10⁻³ Torr, and on the occasion ofcarrying out film formation on the substrate by depositing an organiccompound material from a deposition source which was placed opposite tothe substrate, material gas is introduced into the film forming chamberat the same time.

In addition, another configuration with regard to the film formingmethod of this invention is a film forming method for depositing anorganic compound on a substrate which was placed in a film formingchamber, and a film forming method characterized in that an inside ofthe film forming chamber is made to be in higher vacuum than 1×10⁻³Torr, and on the occasion of carrying out film formation on thesubstrate by depositing an organic compound material from a depositionsource which was placed opposite to the substrate, material gas, whichwas radicalized, is introduced into the film forming chamber at the sametime.

In addition, in the above-described each configuration, it ischaracterized that the material gas is of one kind or plural kinds,which were selected from monosilane, disilane, trisilane, SiF₄, GeH₄,GeF₄, SnH₄, CH₄, C₂H₂, C₂H₄, or C₆H₆.

In addition, phosphin gas may be introduced in addition to monosilane.In addition, in lieu of monosilane, it is possible to use various gasindicated by AsH₃, B₂H₂, BF₄, H₂Te, Cd(CH₃)₂, Zn(CH₃)₂, (CH₃)₃In, H₂Se,BeH₂, trimethyl gallium, or triethyl gallium.

In addition, as a layer including an organic compound, which is placedbetween a cathode and an anode, representative is an example in which 3layers of a hole transport layer, a light emitting layer, an electrontransport layer are laminated, but it is not restrictive in particular,and a configuration of laminating in the order of a hole injectionlayer/a hole transport layer/a light emitting layer/an electrontransport layer, or a hole injection layer/a hole transport layer/alight emitting layer/an electron transport layer/an electron injectionlayer, on the anode, a 2 layers configuration and a single layerconfiguration may be made. In the light emitting layer, a fluorescencecoloring matter etc. may be doped. In addition, as the light emittinglayer, there are also a light emitting layer having a hole transportproperty, a light emitting layer having an electron transport property,and so on. In addition, these layers may be formed by using a lowmolecular series material, and an 1 layer or several layers among themmay be formed by using a high molecular series material. In passing, inthis specification, all layers which are disposed between the cathodeand the anode are collectively called as a layer including an organiccompound (EL layer). Therefore, the above-described hole injectionlayer, the hole transport layer, the light emitting layer, the electrontransport layer and the electron injection layer are all included in theEL layer. In addition, the layer including the organic compound (ELlayer) may include an inorganic material such as silicon.

In passing, a light emitting device (EL device) has a layer including anorganic compound in which obtained is electro luminescence which isgenerated by applying an electric field (hereinafter, inscribed as an ELlayer), an anode, and a cathode. As luminescence in an organic compound,there are light emission (fluorescence) on the occasion of returningfrom a singlet excitation state to a ground state, and light emission(phosphorescent) on the occasion of returning from a triplet excitationstate to the ground state, and a case in which either light emission wasused is applicable to a light emitting apparatus which is fabricated bythis invention.

In passing, in this specification, all layers, which are disposedbetween an a cathode and an anode are collectively called as an ELlayer. Therefore, the above-described hole injection layer, the holetransport layer, the light emitting layer, the electron transport layerand the electron injection layer are all included in the EL layer.

In addition, in the light emitting apparatus of this invention, a drivemethod of screen display is not restrictive in particular, and forexample, a point sequential driving method, a line sequential drivingmethod, a surface sequential driving method, and so on may be used.Representatively, the line sequential driving method is used, and a timedivision tone driving method and an area tone driving method may be usedproperly. In addition, a video signal, which is inputted into a sourceline of a light emitting apparatus may be an analog signal, or may be adigital signal, and a drive circuit and so on may be designed properly,in accordance with the video signal.

In addition, in this specification, a light emitting device, which isformed by a cathode, an EL layer and an anode, is called as an ELdevice, and as to this, there are 2 types of systems in which the ELlayer is formed between 2 types of stripe shaped electrodes (simplematrix system), or a system in which the EL layer is formed betweenpixel electrodes which were connected to TFT s and arranged in a matrixshape, and an opposed electrode (active matrix system).

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a cross-sectional view of a film forming apparatus of thisinvention showing an embodiment mode 1.

FIG. 2 is a cross-sectional view of a film forming apparatus of thisinvention showing an embodiment mode 2.

FIG. 3 is a cross-sectional view of a film forming apparatus of thisinvention showing an embodiment mode 3.

FIG. 4 is a cross-sectional view of a film forming apparatus of thisinvention showing an embodiment mode 4.

FIGS. 5A and 5B are views for explaining a device configuration which isfabricated by the film forming apparatus of this invention showing anembodiment 1.

FIG. 6 is a view showing a multi-chamber system manufacturing apparatusshowing an embodiment 2.

FIGS. 7A and 7B are views showing a crucible transfer in an installationchamber showing the embodiment 2.

FIGS. 8A and 8B are views showing a crucible transfer to a depositionsource holder in the installation chamber showing the embodiment 2.

FIGS. 9A and 9B are views showing an embodiment 3.

FIGS. 10A and 10B are views showing the embodiment 3.

FIG. 11A to 11 F are views showing an embodiment 4.

FIGS. 12A and 12B are views showing an embodiment 5.

FIG. 13A to 13H are views showing an embodiment 6.

FIG. 14 is a view showing an inline system manufacturing apparatusshowing an embodiment 7.

BEST MODE FOR CARRYING OUT THE INVENTION

Embodiment modes of this invention will be hereinafter described.

Embodiment Mode 1

A configuration of a film forming apparatus in this invention will bedescribed by use of FIG. 1. FIG. 1 is one example of a cross-sectionalview in the film forming apparatus of this invention.

On the occasion of carrying out film formation by a deposition method,it is preferable to use a face-down system (also called as a depo-upsystem), and a substrate 10 is set with a film formed surface downward.A system, in which film formation is carried out with a film formedsurface of a substrate face downward, is called as the face-down system,and according to this system, it is possible to suppress attachment ofdust.

As shown in FIG. 1, in contact with the substrate 10, heating means,here, a heater is disposed on a substrate holder 12. By heating means,it is possible to set temperature of the substrate to 50-200° C.,preferably, 65-150° C. In addition, the substrate 10 is fixed by beingsandwiched by metal masks (not shown in the figure), by a permanentmagnet which was built in the substrate holder. In addition, on a levelblock 18 which was disposed in a film forming chamber, deposition cells(also called as deposition holders) 13, which are also capable of beingheated to temperatures which are different from each other, aredisposed. In passing, a deposition source is disposed so as to beopposed to the substrate. Here, shown was an example in which thesubstrate was fixed by being sandwiched by metal masks, by use of thepermanent magnet, but it may be fixed by a holder.

Here, the deposition source is composed of the deposition cells 13, acontainer which accommodates an organic compound (a crucible, adeposition board, etc.), a shutter 14, heating means for heating theorganic compound, and a heat insulating material for surrounding aperiphery. As the heating means, a resistance heating type isstandardized, but a Knudsen cell may also be used.

In addition, to the film forming chamber, coupled are a gas introductionsystem which introduces material gas by several seem into the filmforming chamber at the time of deposition, and a gas introduction systemwhich makes an inside of the film forming chamber at normal pressures.As the material gas, used are one kind or plural kinds, which wereselected from monosilane, disilane, trisilane, SiF₄, GeH₄, GeF₄, SnH₄,CH₄, C₂H₂, C₂H₄, or C₆H₆. In passing, it is desirable to make nomaterial gas flow from a gas introduction port to a gas discharge portby the most direct way.

When a space surrounded by a chamber wall 11 is depressurized to 5×10⁻³Torr (0.665 Pa) or less, preferably, 1×10⁻³ Torr (0.133 Pa) or less, bydepressurizing means (a turbo molecular pump 16 or a vacuum pump such asa dry pump and a cryopump 17), and the organic compound in an inside isheated up to sublimation temperature by heating means which was disposedin the deposition cell (resistance which is generated on the occasionthat a voltage was applied (resistance heating)). It is evaporated anddeposited on a surface of the substrate 10. By introducing a materialgas with several seem on the occasion of this deposition, a component ofthe material gas is included in a film. In passing, in FIG. 1, shown issuch an example that co-deposition is carried out with one cell beinginclined, so that an evaporated first material 15 a and an evaporatedsecond material 15 b are mixed, and further, introduced material ismixed to form a film. The co-deposition is referred to a depositionmethod in which different deposition sources are heated and evaporatedat the same time, and different materials are mixed in a film formingstage. In addition, the substrate holder 12 is rotated so as to equalizea film thickness, on the occasion of deposition.

In passing, it is assumed in this specification that the surface of thesubstrate includes the substrate, and a thin film which was formed onthe same, and here, it is assumed that an anode or a cathode is formedon the substrate.

In passing, the shutter 14 controls deposition of an evaporated organiccompound. In short, when the shutter is opened, it is possible todeposit an organic compound which was evaporated by heating. Further,one or a plurality of other shutters (e.g., a shutter which covers adeposition source during a period until sublimation from the depositionsource is stabilized) may be disposed between the substrate 10 and theshutter 14.

In passing, it is desirable to heat and evaporate an organic compoundprior to deposition, and to be able to immediately start deposition oncethe shutter 14 is opened at the time of deposition, since film formingtime is shortened.

In addition, in the film forming apparatus in this invention, it becomespossible to form an organic compound film having a plurality offunctional regions in one film forming chamber, and a plurality ofdeposition sources are disposed in accordance with it.

In addition, disposed is an anti-attachment plate 19 for preventing anorganic compound from being attached to an inner wall at the time ofdeposition. By disposing this anti-attachment plate 19, it is possibleto have an organic compound, which is not deposited on a substrate,attached.

In addition, the film forming chamber is coupled to a plurality ofvacuum pumping processing chambers which evacuate an inside of the filmforming chamber. As the vacuum pumping processing chamber, it isequipped with a magnetic levitation type turbo molecular pump 16 and acryopump 17. By this, it is possible to set ultimate vacuum of the filmforming chamber to 10⁻⁵-10⁻⁶ Torr. In passing, it is designed to stopthe cryopump 17 after vacuum pumping was carried out by the cryopump 17,and to carry out deposition over flowing material gas with several sccm,while carrying out vacuum pumping by the turbo molecular pump 16. Afterdeposition was finished, inert gas is introduced while discharging airby the turbo molecular pump, to increase a pressure to some extent, andremaining material gas is discharged from the film forming chamber, andhigh vacuum pumping is carried out again. Finally, a deposited substrateis taken out from the film forming chamber to a load chamber whilekeeping vacuum.

In addition, as a material which is used for a chamber wall 11, since itis possible to lessen sorbability of an impurity such as oxygen andwater, by lessening its surface area, aluminum and stainless (SUS) etc.,which were changed to a mirror surface by applying electrolyticpolishing, are used for an inside wall surface. By this, it is possibleto maintain a degree of vacuum in an inside of the film forming chamberto 10⁻⁵-10⁻⁶ Torr. Also, a material such as ceramics, which wasprocessed so as for air holes to get fewer in the extreme, is used foran inside member. In passing, it is preferable that these are materialshaving such surface smoothness that center line average asperity becomes3 nm or less.

If the film forming apparatus shown in FIG. 1 is used, it is possible toform a high-density film by intentionally introducing material gas atthe time of film forming, and by having a component of the material gasincluded in an organic compound film. By having a component of amaterial gas included in an organic compound film, it is possible toblock an impurity such as oxygen and moisture which causes deteriorationfrom being intruded, diffused in a film, and to improve reliability of alight emitting device.

For example, when monosilane gas with several sccm is introduced into afilm forming chamber in which deposition is going on by evaporating anorganic material, together with the organic material which is evaporatedfrom a deposition source and proceeding to a substrate, SiH₄, which isfloating in the film forming chamber is taken in an organic film. Thatis, a gap of organic material molecules with a relatively large particleradius is to be filled in with SiH₄ with a small atomic radius as it is,or with SiHx, and it is possible to have it included in an organic film.During a period of deposition, a deposition source is heated to a levelof 100° C., but decomposition temperature (decomposition temperatureunder atmospheric pressure) of monosilane is approximately 550° C., andtherefore, it is not decomposed. According to an organic material to beevaporated, there is also such a case that it is reacted with Silt, orSiHx to form a compound. In addition, since oxygen (or moisture), whichslightly remains in the film forming chamber, is captured to generateSiOx, it is possible to reduce oxygen (or moisture) which is a factorfor deteriorating an organic material in the film forming chamber and ina film, and accordingly, it is possible to improve reliability of alight emitting device. In addition, generated SiOx may be included in afilm as it is.

It is conceivable that, when there is a gap of organic materialmolecules in a film, it is easy for oxygen to enter into the gap, anddeterioration is generated. Therefore, since it is only sufficient tofill in this gap, it is possible to improve reliability of a lightemitting device, even by using SiF₄, GeH₄, GeF₄, SnH₄, or hydro carbonseries gas (CH₄, C₂H₂, C₂H₄, C₆H₆ etc.).

In passing, as the above-described organic material, it is possible topoint to α-NPD(4,4′-bis-[N-(naphthyl)-N-phenyl-amino]biphenyl),BCP(basocuproine),MTDATA(4,4′,4″-tris(N-3-metylphenyl-N-phenyl-amino)triphenyl amine),Alq₃(tris-8-quinolinoaluminum complex) and so on.

Hereinafter, by use of the film forming apparatus of FIG. 1, shown isone example of a fabricating procedure of a light emitting device havingan anode, an organic compound layer which is in contact with the anode,and a cathode which is in contact with the organic compound layer.

Firstly, a substrate, on which an anode was formed, is carried in acarry-in chamber (not shown in the figure). As a material which formsthe anode, a transparent conductive material is used, and it is possibleto use an indium/tin compound, zinc oxide and so on. Then, it istransferred to a film formation pretreatment chamber (not shown in thefigure) which was coupled to the carry-in chamber (not shown in thefigure). In this film formation pretreatment chamber, cleaning of ananode surface, oxidation treatment, heat treatment etc. may be carriedout. As the cleaning of the anode surface, irradiation of ultravioletrays is carried out in vacuum, and the anode surface is cleaned. Inaddition, as the oxidation treatment, it may be irradiated withultraviolet rays in an atmosphere including oxygen, while being heatedwith 100-120° C., and it is useful to such a case that the anode is anoxide like ITO. In addition, as the heat treatment, heating with heattemperature of 50° C. or more, at which a substrate is sustainable invacuum, preferably, heating of 65-150° C. may be carried out, andremoved is an impurity such as oxygen and moisture attached to thesubstrate, and an impurity such as oxygen and moisture in a film formedon the substrate. In particular, since an EL material easily getsdeteriorated by an impurity such as oxygen and water, it is useful toheat in vacuum prior to deposition.

Then, the substrate, for which the above-described pretreatment wasfinished, is carried in the film forming chamber without contact withatmospheric air. In the film forming chamber, the substrate 10 is setwith a film formed surface downward. In passing, it is preferable thatvacuum pumping is applied to an inside of the film forming chamberbefore the substrate is carried in.

Vacuum pumping means, which is disposed so as to be coupled to the filmforming chamber, vacuates a level of 1 Pa from an atmospheric pressureby an oil-free dry pump, and vacuates a pressure more than that by themagnetic levitation type turbo molecular pump 16. Further, in the filmforming chamber, for the purpose of removing moisture, the cryopump 17is disposed in parallel. By doing this, a degree of vacuum up to 1×10⁻⁶Torr is realized.

On the occasion of carrying out vacuum pumping an inside of the filmforming chamber, it is possible to remove absorbed water and absorbedoxygen which were attached to a film forming chamber inner wall, a metalmask and an anti-attachment shield at the same time. Further, it ispreferable that the film forming chamber is heated before the substrateis carried in. After the substrate, which was heated in thepretreatment, was cooled slowly, and carried in the film formingchamber, it is heated again, which takes long time and invites loweringof throughput. Preferably, the substrate, which was heated by heattreatment which was carried out in the pretreatment, is carried in andset in the heated film forming chamber as it is, without being cooled.In passing, since heating means for heating the substrate is disposed inthe substrate holder 12 in the apparatus shown in FIG. 1, it is possibleto also carry out heat treatment in vacuum, which is the pretreatment,in the film forming chamber.

Here, beat treatment in vacuum (anneal) is carried out in the filmforming chamber before deposition is carried out. By this anneal(deairing), removed are an impurity such as oxygen and moisture attachedto the substrate, and an impurity such as oxygen and moisture in a filmformed on the substrate. Since the impurity, which was removed in thismanner, is removed from the film forming chamber, it is preferable tocarry out vacuum pumping, and further, a degree of vacuum may beheightened.

Then, deposition is carried out in the film forming chamber which wasvacuated up to a degree of vacuum of 5×10⁻³ Torr (0.665 Pa) or less,preferably 10⁻⁴-10⁻⁶ Torr, over introducing material gas with severalseem. On the occasion of deposition, a first organic compound has beenevaporated by resistance heating in advance, and flies in a direction ofthe substrate 10 by the shutter 14 being opened at the time ofdeposition. The evaporated organic compound flies upward, and mixed withmaterial gas, and deposited on the substrate 10, passing through anopening part (not shown in the figure) which was disposed in a metalmask. In passing, on the occasion of deposition, temperature of thesubstrate is set to 50-200° C., preferably 65-150° C., by means forheating the substrate.

In the apparatus shown in FIG. 1, heating means for heating thesubstrate is disposed, and heat treatment in vacuum is carried outduring a period of film forming. Since there is such fear that animpurity such as oxygen and moisture is mixed in an evaporation materialat the time of deposition, it is useful to carry out heat treatment invacuum during a period of deposition and to have gas included in a filmdischarged. In this manner, by carrying out deposition over heating thesubstrate in vacuum, and by carrying out film formation up to a desiredfilm thickness, it is possible to form a high-density organic compoundlayer. In passing, an organic compound, which is mentioned here, is anorganic compound which has a property such as a hole injection propertyfor accepting a hole from an anode, a hole transport property in whichhole mobility is larger than electron mobility, an electron transportproperty in which electron mobility is larger than hole mobility, anelectron injection property for accepting an electron from a cathode, ablocking property in which it is possible to block a move of a hole oran electron, and a light emission property for presenting lightemission.

In this manner, deposition of an organic compound is finished, and afilm, which is composed of the organic compound, is formed on an anode.

Further, in order to reduce an impurity such as moisture and oxygen inthe obtained organic compound layer, heat treatment is carried out witha pressure of 1×10⁻⁴ Torr or less, and heat treatment for havingmoisture etc. mixed in at the time of deposition, discharged may becarried out. Since there is such fear that an impurity such as oxygenand moisture is mixed in an evaporation material at the time ofdeposition, it is useful to carry out heat treatment in vacuum afterdeposition, and to have gas included in a film, discharged. In case ofcarrying out anneal after deposition, it is preferable to carry thesubstrate in a processing chamber which is different from the filmforming chamber, without contact with atmospheric air, and to carry outanneal in vacuum.

Since heating means for heating the substrate is disposed in theapparatus shown in FIG. 1, it is possible to also carry out heattreatment in vacuum in the film forming chamber after film formation. Itis preferable to carry out anneal of 100-200° C., after deposition, withfurther higher vacuum than a degree of vacuum on the occasion ofdeposition. By this anneal (deairing) after film formation, an impuritysuch as oxygen and moisture in an organic compound layer formed on thesubstrate is further removed, and a high-density organic compound layeris formed.

In the organic compound layer, material gas or a main component ofmaterial gas, for example, in case that monosilane gas was introduced onthe occasion of deposition, silicon of 0.01 atoms %-5 atoms % by SIMSmeasurement, preferably an extent of 1 atoms %-2 atoms % is designed tobe included. Since a film, which includes an organic compound formed asa film by use of the film forming apparatus shown in FIG. 1, becomes afilm which includes material gas or a main component of material gas,and in which it is hard to get in oxygen and moisture, improved isreliability of a light emitting device which used this film including anorganic compound.

The processes, which were indicated up to here, are of a case of forminga single layer of an organic compound.

Hereinafter, by repeating the above-described forming processes of asingle layer, a desired organic compound layer is laminated, andfinally, a cathode is formed as a laminated layer. In passing, in caseof laminating different evaporation materials (an organic compound and amaterial of a cathode), they may be carried out in separate film formingchambers, and all are laminated as a film in the same film formingchamber. As a material of a cathode, a material including magnesium(Mg), lithium (Li) or calcium (Ca), in which a work function is small,is used. Preferably, an electrode, which comprises MgAg (a material inwhich Mg and Ag were mixed with Mg:Ag=10:1) may be used. Besides, citedare ytterbium (Yb), MgAgAl electrodes, LiAl electrodes, or LiFAlelectrodes. In this manner, it is possible to fabricate a light emittingdevice which has an anode, an organic compound layer which is in contactwith the anode, and a cathode which is in contact with the organiccompound layer. In addition, it is possible to carry out anneal beforefilm formation, in a film forming chamber, and in that case, throughputis improved. In addition, it is possible to carry out anneal after filmformation, and in that case, throughput is improved.

Embodiment Mode 2

Here, a film forming apparatus, which is different from the embodimentmode 1, is shown in FIG. 2.

FIG. 2 shows an example of a film forming apparatus in which adeposition source is moved (or rotated), so as for a film to be formeduniformly.

In FIG. 2, 20 designates a substrate, and 21 designates a chamber wall,and 22 designates a substrate holder, and 23 designates a cell, and 25 adesignates an evaporated first material, and 25 b designates anevaporated second material, and 26 designates a turbo molecular pump,and 27 designates a cryopump, and 28 designates a moving mechanism formoving the cell. Since there is no necessity to rotate the substrate, itis possible to provide a deposition apparatus which can correspond to alarge area substrate. In addition, by the deposition cell 23 moving in aX axis direction and a Y axis direction to the substrate, it becomespossible to form a deposition film uniformly.

In the deposition apparatus of this invention, on the occasion ofdeposition, a spacing distance d of the substrate 20 and the depositioncell 23 is narrowed to representatively 30 cm or less, preferably, 20 cmor less, more preferably 5 cm-15 cm, to dramatically improve utilizationefficiency of a deposition material and throughput.

In addition, there is not such a necessity that an organic compound,which is provided on the deposition cell 23, is one or of one type, anda plural number is fine. For example, other than a material of one type,which is provided in the deposition source holder as a luminescentorganic compound, another organic material (dopant material), which canbecome dopant, may be provided all together. As an organic compoundlayer to be evaporated, it is configured by a host material, and aluminescent material (dopant material) whose excitation energy is lowerthan the host material, and it is designed in such a manner thatexcitation energy of dopant becomes lower than excitation energy of ahole transport property region, and excitation energy of an electrontransport layer, which is preferable. By this, it is possible to preventdiffusion of molecular exciters of the dopant, and to have the dopantemit light effectively. In addition, if the dopant is a carrier-traptype material, it is possible to also heighten recombination efficiencyof a carrier. In addition, such a case that a material, which canconvert triplet excitation energy into light emission, was added to amixed region as dopant is assumed to be included in this invention. Inaddition, in forming the mixed region, concentration gradient may beapplied to the mixed region.

Further, in case of using a plurality of organic compounds which areprovided in one deposition source holder, it is desirable to tilt anevaporating direction so as to be crossed at a position of a material tobe deposited, so that the organic compounds are mixed with each other.In addition, for the purpose of carrying out co-deposition, in thedeposition cell, 4 kinds of deposition materials (e.g., as a depositionmaterial a, 2 kinds of host materials, and as a deposition material b, 2kinds of dopant materials) may be provided.

In addition, in case of citing a major process in which there is suchfear that an impurity such as oxygen and water is mixed in, to an ELmaterial and a metal material to be evaporated, a process for setting anEL material in a film forming chamber prior to deposition, a depositionprocess, and so on are conceivable.

In this connection, it is preferable to provide a glove in apretreatment chamber which was coupled to a film forming chamber, and tomove a deposition source in its entirety from the film forming chamberto the pretreatment chamber, and to set a deposition material in thedeposition source in the pretreatment chamber. That is, designed is amanufacturing apparatus in which a deposition source is moved up to apretreatment chamber. By doing this, it is possible to set a depositionsource, while maintaining a cleaning level of the film forming chamber.

Also in the film forming apparatus shown in FIG. 2, by intentionallyintroducing material gas at the time of film formation, and by includinga component of the material gas in an organic compound film, it ispossible to make a high-density film. By including a component of thematerial gas in the organic compound film, it is possible to block animpurity such as oxygen and moisture which causes deterioration frombeing intruded, diffused in a film, and to improve reliability of alight emitting device.

In addition, it is possible to freely combine this embodiment mode withthe embodiment mode 1.

Embodiment Mode 3

Here, a film forming apparatus, which is different from the embodimentmode 1, is shown in FIG. 3. In passing, the same reference numerals areused for the same places as in FIG. 1.

The film forming apparatus shown in FIG. 3 is an example in whichdeposition is carried out over introducing material gas, which wasradicalized by plasma generating means in advance, into a film formingchamber.

As shown in FIG. 3, a microwave source 30 a is connected to a waveguide30 b. This waveguide 30 b forms plasma 30 c due to glow discharge, bycarrying out irradiation to material gas in a discharge tube. From themicrowave source which is used here, μ wave of approximately 2.45 GHz isradiated.

For example, in case that monosilane gas was used as material gas, anoxide silicon precursor such as SiHx, SiHxOy, SiOy is generated, andintroduced into a film forming chamber. These radicals are easilyreacted with oxygen and moisture, and it is possible to reduce oxygenconcentration and a moisture amount in the film forming chamber, andaccordingly, it is possible to obtain an organic compound film with highreliability.

In addition, since these radicals are easily moved to, or deposited at aplace with higher temperature, it is desirable to carry out depositionover heating a substrate by a heater 31 which is disposed in thesubstrate holder 12. In addition, for the purpose of preventing it frombeing moved to, or deposited on the deposition cell 13, it is desirableto cover the deposition cell 13 by a heat insulating material.

In addition, it is possible to freely combine this embodiment mode withthe embodiment mode 1 or the embodiment mode 2.

Embodiment Mode 4

Here, a film forming apparatus, which is different from the embodimentmode 1, is shown in FIG. 4.

The film forming apparatus shown in FIG. 4 is an example in which, byusing an ion plating method, material gas is ionized in a film formingchamber, and attached to an evaporated organic material 65, and alongwith it, deposition is carried out.

In FIG. 4, 60 designates a substrate, and 61 designates a chamber wall,and 62 designates a substrate holder, and 63 designates a cell, and 65designates an evaporated organic material, and 66 designates a turbomolecular pump, and 67 designates a cryopump, and 68 designates a levelblock, and 69 designates an anti-attachment plate.

In the film forming apparatus shown in FIG. 4, disposed are an electrongun 50 for irradiating an electron beam to a crucible 52 whichaccommodated a material 51, and plasma generating means 64 forgenerating plasma 53.

An electron beam is irradiated to the crucible 52 by the electron gun50, to melt, and evaporate the material 51 in the crucible, and anevaporation flow of the material 51 is formed, and ionized by the plasmagenerating means 64, and the ionized evaporation flow and the organicmaterial 65 evaporated from the deposition cell 63 are mixed, and bybombarding these against the substrate, a film is formed.

In the film forming apparatus shown in FIG. 4, the material 51, whichwas evaporated in midstream of deposition of an organic material, ischemically attached, and, a component of the material 51 is included inan organic compound film, and thereby, it is possible to make ahigh-density film. By having a component of a material 51 included in anorganic compound film, it is possible to block an impurity such asoxygen and moisture which causes deterioration from being intruded,diffused in a film, and to improve reliability of a light emittingdevice.

In addition, it is possible to freely combine this embodiment mode withany one of the embodiment modes 1 through 3.

As to this invention comprising the above-described configuration, itwill be described in detail with embodiments shown as follows.

EMBODIMENTS Embodiment 1

In this embodiment, shown is an example of fabricating various lightemitting devices which have yet functions of a plurality of materials,in the same manner as a function separation of a laminatedconfiguration, at the same time of heightening mobility of carriers bymitigating an energy barrier which exists in an organic compound film.

With regard to mitigation of the energy barrier in the laminatedconfiguration, it is notably seen in a technology of insertion of acarrier injection layer. In short, in a boundary face of a laminatedconfiguration with a large energy barrier, by inserting a material formitigating that energy barrier, it is possible to design the energybarrier stepwise. By this, it is possible to heighten a carrierinjection property from an electrode, and indeed, to lower a drivevoltage to some extent. However, a problem is that, by increasing thenumber of layers, the number of organic boundary faces is increasedconversely. This is considered to be a cause of such a fact that asingle layer configuration is holding top data of drive voltage/powerefficiency. Conversely speaking, by overcoming this point, overexploiting a merit of the laminated configuration (it is possible tocombine various materials, and there is no necessity of a complexmolecular design), it is possible to yet catch up the drivevoltage/power efficiency of the single layer configuration.

In this connection, in case that an organic compound film, which iscomposed of a plurality of functional regions, is formed between ananode and a cathode of a light emitting device, it is possible to form aconfiguration having a mixed region which is composed of both of amaterial which configures a first functional region, and a materialwhich configures a second functional region, between the firstfunctional region and the second functional region, but not aconventional laminated configuration in which a distinct boundary faceexists.

By applying the above configuration, it is conceivable that an energybarrier, which exists between functional regions, is reduced as comparedto a conventional configuration, and an injection property of carriersis improved. That is, the energy barrier between functional regions ismitigated by forming the mixed region. Therefore, it becomes possible toprevent reduction of a drive voltage, and luminance lowering.

From the foregoing, in this embodiment, in a light emitting device whichhas at least a region (first functional region) in which a first organiccompound can express a function, and a region (second functional region)in which a second organic compound, which is different from a substanceconfiguring the first functional region, can express a function, and infabrication of a light emitting apparatus which has this, by using thefilm forming apparatus shown in FIG. 1, between the first functionalregion and the second functional region, fabricated is a mixed regionwhich is composed of an organic compound which configures the firstfunctional region, and an organic compound which configures the secondfunctional region.

In the film forming apparatus shown in FIG. 1, it is designed that anorganic compound film, which has a plurality of functional regions, isformed in one film forming chamber, and a plurality of depositionsources are also disposed in accordance with it. In passing, asubstrate, on which an anode is formed, is carried in and set.

Firstly, a first organic compound, which is provided in a first materialchamber, is deposited. In passing, the first organic compound has beenevaporated in advance by resistance heating, and flies in a direction ofa substrate by a first shutter being opened at the time of deposition.On the occasion of deposition, material gas, here, monosilane gas isintroduced, and included in a film. By this, it is possible to form afirst functional region 210 shown in FIG. 5(A).

And, over depositing the first organic compound 17 a, a second shutteris opened, and a second organic compound, which is provided in a secondmaterial chamber, is deposited. In passing, the second organic compoundhas also been evaporated in advance by resistance heating, and flies ina direction of the substrate by the second shutter being opened at thetime of deposition. On the occasion of deposition, material gas, here,monosilane gas is introduced, and included in a film. By this, it ispossible to form a first mixed region 211, which is composed of thefirst organic compound and the second organic compound.

And, after a brief interval, only the first shutter is closed, and thesecond organic compound is deposited. On the occasion of deposition,material gas, here, monosilane gas is introduced, and included in afilm. By this, it is possible to form a second functional region 212.

In passing, in this embodiment, shown was a method of forming a mixedregion, by depositing 2 kinds of organic compounds at the same time, butit is also possible to form a mixed region between a first functionalregion and a second functional region, after a first organic compoundwas deposited, by depositing a second organic compound under itsdeposition atmosphere.

Next, over depositing the second organic compound, a third shutter isopened, and a third organic compound, which is provided in a thirdmaterial chamber, is deposited. In passing, the third organic compoundhas also been evaporated in advance by resistance heating, and flies ina direction of the substrate by the third shutter being opened at thetime of deposition. On the occasion of deposition, material gas, here,monosilane gas is introduced, and included in a film. By this, it ispossible to form a second mixed region 213, which is composed of thesecond organic compound and the third organic compound.

And, after a brief interval, only the second shutter is closed, and thethird organic compound is deposited. On the occasion of deposition,material gas, here, monosilane gas is introduced, and included in afilm. And, by closing the third shutter, deposition of the third organiccompound is completed. By this, it is possible to form a thirdfunctional region 214.

Finally, by forming a cathode, a light emitting device, which is formedby the film forming apparatus of this invention, is completed.

Further, as another organic compound film, as shown in FIG. 5(B), aftera first functional region 220 was formed by using a first organiccompound, a first mixed region 221, which is composed of the firstorganic compound and a second organic compound, is formed, and further,by using the second organic compound, a second functional region 222 isformed. And, in midstream of forming the second functional region 222, athird shutter is opened temporarily, and deposition of a third organiccompound 17 c is carried out simultaneously, and thereby, a second mixedregion 223 is formed.

After a brief interval, by closing the third shutter, the secondfunctional region 222 is formed again. And, by forming a cathode, alight emitting device is formed.

Since the film forming apparatus of FIG. 2, which can form an organiccompound film as described above, can form an organic compound filmhaving a plurality of functional regions, in the same film formingchamber, it is possible to form a mixed region on a functional regionboundary face. By the foregoing, it is possible to fabricate a lightemitting device which does not show a clear laminated configuration(i.e., there is no distinct organic boundary face), and had a pluralityof functions.

In addition, the film forming apparatus of FIG. 1 is capable ofintroducing material gas (monosilane gas) intentionally at the time ofthe film formation, and having a component of the material gas includedin an organic compound film, and by having a material with a smallatomic radius (representatively, silicon) included in an organiccompound film, it is possible to fit more between molecules in the mixedregion. Therefore, further, it becomes possible to prevent reduction ofa drive voltage, and luminance lowering. In addition, it is furtherpossible to remove an impurity such as oxygen and moisture in a filmforming chamber by the material gas, and it is possible to form ahigh-density organic compound layer.

In addition, it is possible to freely combine this embodiment with theembodiment mode 1, the embodiment mode 2, the embodiment mode 3, or theembodiment mode 4.

Embodiment 2

In this embodiment, an example of a multi-chamber type manufacturingapparatus, in which fabrication from a first electrode up to sealing wasfully automated, is shown in FIG. 6.

FIG. 6 shows a multi-chamber manufacturing apparatus which has gates 500a-500 y, transfer chambers 502, 504 a, 508, 514, 518, hand-over chambers505, 507, 511, a loading chamber 501, a first film forming chamber 506H,a second film forming chamber 506B, a third film forming chamber 506C, afourth film forming chamber 506R, a fifth film forming chamber 506E, andother film forming chambers 509, 510, 512, 513, 531, 532, installationchambers 526R, 526G, 526B, 526E, 526H in which deposition sources areinstalled, pretreatment chambers 503 a, 503 b, a sealing chamber 516, amask stock chamber 524, a seal substrate stock chamber 530, cassettechambers 520 a, 520 b, a tray mounting stage 521, and a pull-out chamber519. In passing, in the transport chamber 504 a, disposed is a transportmechanism 504 b for transporting a substrate 504 c, and in othertransport chambers, transport mechanism are also provided, respectively,in the same manner.

Hereinafter, a procedure for carrying a substrate, on which an anode(first electrode), and an insulator (partition wall) which covers an endpart of the anode were disposed, in a manufacturing apparatus shown inFIG. 6, and for fabricating a light emitting apparatus will be shown. Inpassing, in case of fabricating an active matrix type light emittingapparatus, a plurality of thin film transistors (current control TFTs)which are connected to an anode, and other thin film transistors(switching TFTs, etc.) have been disposed on a substrate in advance, anda drive circuit, which is composed of thin film transistors, is alsodisposed. In addition, also in case of fabricating a simple matrix typelight emitting apparatus, it is possible to fabricate by themanufacturing apparatus shown in FIG. 6.

Firstly, the above-described substrate is set to the cassette chamber520 a or the cassette chamber 520 b. In case that the substrate is alarge size substrate (e.g., 300 mm×360 mm), it is set to the cassettechamber 520 b, and in case that it is a normal substrate (e.g., 127mm×127 mm), after it was set to the cassette chamber 520 a, it istransferred to the tray mounting stage 521, and a plurality ofsubstrates are set to a tray (e.g., 300 mm×360 mm).

The substrate (a substrate on which an anode and an insulator whichcovers an end part of the anode were disposed) which was set to thecassette chamber is transferred to the transfer chamber 518.

In addition, before it was set to the cassette chamber, for the purposeof reducing point defects, it is preferable to clean a surface of afirst electrode (anode) by a porous sponge (representatively, made byPVA (polyvinyl alcohol), made by nylon, etc.) in which a surface-activeagent (alkalescent) was contained, and to remove dusts on the surface.As a cleaning mechanism, a cleaning apparatus having a roll brush (madeby PVA) which is turned around an axial line in parallel with a surfaceof the substrate and is in contact with the surface of the substrate maybe used, and a cleaning apparatus having a disk brush (made by PVA)which is in contact with a surface of the substrate over turning aroundan axis line which is perpendicular to the surface of the substrate maybe used. In addition, prior to forming a film, which includes an organiccompound, in order to remove moisture and another gas which are includedin the above-described substrate, it is preferable to carry out annealfor deairing in vacuum, and it is transferred to the pretreatmentchamber 523 which was coupled to the transfer chamber 518, and annealmay be carried out there.

Then, it is transferred from the transfer chamber 518 in which asubstrate transfer mechanism was disposed, to a loading chamber 501. Inthe manufacturing apparatus of this embodiment, in the loading chamber501, a substrate inverting mechanism is provided, and it is possible toinvert the substrate properly. The loading chamber 501 is coupled to avacuum pumping processing chamber, and it is preferable that, aftervacuum pumping was carried out, inert gas is introduced to realize anatmospheric pressure.

Then, it is transferred to the transfer chamber 502 which was coupled tothe loading chamber 501. In order that moisture and oxygen do not existin the transfer chamber 502 to the utmost, it is preferable that it hasbeen vacuated in advance, and vacuum has been maintained.

In addition, as the above-described vacuum pumping processing chamber, amagnetic levitation type turbo molecular pump, a cryopump, or a dry pumpis provided. By this, it is possible to set ultimate vacuum of thetransfer chamber which was coupled to the loading chamber to 10⁻⁵-10⁻⁶Torr, and further, it is possible to control back diffusion of animpurity from a pump side and an air exhaust system. In order to preventan impurity from being introduced into an apparatus inside, as gas to beintroduced, inert gas such as nitrogen and rare gas is used. As thesegasses which are introduced into an apparatus inside, used is one whichwas highly purified by a gas purification machine, before it isintroduced into an apparatus. Therefore, there is a necessity of havinga gas purification machine so that gas is introduced into a depositionapparatus after it was highly purified. By this, since it is possible toremove an impurity such as oxygen, water and others, which is includedin gas, in advance, it is possible to prevent these impurities frombeing introduced into an apparatus.

In addition, in case that it is desired to remove a film including anorganic compound, which was formed at an unnecessary place, it istransferred to the pretreatment chamber 503 a, and a lamination layer oforganic compound films may be selectively removed. The pretreatmentchamber 503 a has plasma generating means, and generates plasma byexciting one kind or a plurality kinds of gasses, which were selectedfrom Ar, H, F, and O, and thereby, carries out dry etching. In addition,a UV irradiating mechanism may be disposed in the pretreatment chamber503 a so that ultraviolet ray irradiation can be carried out as an anodesurface treatment.

In addition, in order to eliminate shrink, it is desirable to carry outvacuum heating right before deposition of a film which includes anorganic compound, and it is transferred to the pretreatment chamber 503b, and in order to completely remove moisture and other gas which areincluded in the above-described substrate, anneal for deairing iscarried out in vacuum (5×10⁻³ Torr (0.665 Pa) or less, preferably,10⁻⁴-10⁻⁶ Torr). In the pretreatment chamber 503 b, by using a flatplate heater (representatively, sheath heater), a plurality ofsubstrates are heated uniformly. In particular, in case that an organicresin film was used as a material of an interlayer insulating film and apartition wall, since there is such fear that, according to an organicresin material, it absorbs moisture easily, and further, degasificationis generated, it is useful to carry out vacuum heating for removingabsorbed moisture by carrying out natural cooling for 30 minutes, afterheating of, for example, 30 minutes or more was carried out with 100°C.-250° C., preferably, 150° C.-200° C. before a layer including anorganic compound is formed.

Then, after the above-described vacuum heating was carried out, thesubstrate is transferred from the transfer chamber 502 to the hand-overchamber 505, and further, the substrate is transferred from thehand-over chamber 505 to the transfer chamber 504 a, without contactwith atmospheric air.

After that, the substrate is properly transferred to the film formingchambers 506R, 506G, 506B, 506E, which were coupled to the transferchamber 504 a, and formed properly is an organic compound layer whichcomprises low molecules which become a hole injection layer, a holetransport layer, a light emitting layer, an electron transport layer, oran electron injection layer. In addition, it is also possible totransfer the substrate from the transfer chamber 502 to the film formingchamber 506H, and to carry out deposition.

In addition, in the film forming chamber 512, a hole injection layer,which comprises a polymeric material, may be formed by an ink-jet methodand a spin coating method. In addition, the substrate is placedvertically, and a film may be formed by an ink-jet method in vacuum.Over a first electrode (anode), poly(ethylenedioxythiophene)/poly(styrene sulfonic acid) aqueous solution(PEDOT/PSS), polyaniline/camphoric sulfonic acid aqueous solution(PANI/CSA), PTPDES, Et-PTPDEK, or PPBA and so on, which act as a holeinjection layer (anode buffer layer), may be applied to an entiresurface and baked. On the occasion of baking, it is preferable to becarried out in a bake chamber 523. In case that a hole injection layer,which is composed of a polymeric material, was formed by an applicationmethod which used a spin coat and so on, a flatness property isimproved, and it is possible to make coverage and film thicknessuniformity of a film to be formed on it, better. In particular, since afilm thickness of a light emitting layer becomes uniform, it is possibleto obtain uniform light emission. In this case, it is desirable that,after the hole injection layer was formed by the application method,right before film formation by a deposition method, vacuum heating(100-200° C.) is carried out. On the occasion of carrying out vacuumheating, it may be carried out in the pretreatment chamber 503 b. Forexample, a surface of a first electrode (anode) was cleaned by a sponge,it is transferred to the cassette chamber, and transferred to the filmforming chamber 512, and poly(ethylene dioxythiophene)/poly(styrenesulfonic acid) aqueous solution (PEDOT/PSS) was applied to an entiresurface with a film thickness 60 nm, and thereafter, it is transferredto the bake chamber 523, and tentatively baked at 80° C., for 10minutes, and really baked at 200° C., for 1 hour, and further, it wastransferred to the pretreatment chamber 503 b, and vacuum heating (170°C., heating 30 minutes, cooling 30 minutes) was carried out right beforedeposition, and thereafter, it is transferred to the film formingchambers 506R, 506G, 506B, and without contact with atmospheric air,formation of a light emitting layer may be carried out by a depositionmethod. In particular, in case that an ITO film is used as an anodematerial, and concavity and convexity, and minute particles exist on asurface, by setting a film thickness of PEDOT/PSS to a film thickness of30 nm or more, it is possible to reduce influence of these.

In addition, since a wet property is not so good when PEDOT/PSS wasapplied over the ITO film, it is desirable to improve the wet propertyby carrying out cleaning by purified water once, after first timeapplication of the PEDOT/PSS aqueous solution was carried out by a spincoating method, and to carry out second time application of thePEDOT/PSS aqueous solution by a spin coating method, and to carry outbaking so as to form a film with good uniformity. In passing, bycarrying out cleaning by purified water once, after the first timeapplication was carried out, obtained is such an advantage that asurface is modified, and minute particles etc. can be also removed.

In addition, in case that PEDOT/PSS was formed as a film by a spincoating method, since the film is formed over an entire surface, it ispreferable to selectively remove an end surface and a peripheral part ofa substrate, a terminal part, a connection region of a cathode and alower part wiring, and so on, and it is preferable to remove by O₂ashing in the pretreatment chamber 503 a.

Here, the film forming chambers 506R, 506G, 506B, 506E, 506H will bedescribed.

In each film forming chamber 506R, 506G, 506B, 506E, 506H, a movabledeposition source holder (deposition cell) is installed. That is, itcorresponds to the film forming chamber of the above-describedembodiment mode 2, which was shown in FIG. 2. As shown in theabove-described embodiment mode 2, deposition is carried out overintroducing material gas on the occasion of deposition. As the materialgas, concretely speaking, one kind or a plurality of kinds, which wereselected from silane series gas (monosilane, disilane, trisilane etc.),SiF₄, GeH₄, GeF₄, SnH₄, or hydro carbon series gas (CH₄, C₂H₂, C₂H₄,C₆H₆ etc.), may be used. By intentionally introducing material gas atthe time of film formation, and by having a component of the materialgas included in an organic compound film, it is possible to make ahigh-density film. By having a component of a material gas included inan organic compound film, it is possible to block an impurity such asoxygen and moisture which causes deterioration from being intruded,diffused in a film, and to improve reliability of a light emittingdevice.

In passing, as to this deposition source holder, a plurality of them areprepared, and a plurality of containers (crucibles) in which ELmaterials were sealed are properly provided, and they are disposed inthe film forming chamber in this state. By setting a substrate by aface-down system, and by carrying out positional alignment of adeposition mask by CCD etc., and by carrying out deposition by aresistance heating method, it is possible to carry out film formationselectively. In passing, a deposition mask is stocked in the mask stockchamber 524, and transferred to the film forming chamber on the occasionof carrying out deposition. In addition, the film forming chamber 532 isan auxiliary deposition chamber for forming a layer including an organiccompound and a metal material layer.

For installation of EL materials in these film forming chambers, it ispreferable to use a manufacturing system which is hereinafter shown.That is, it is preferable to carry out film formation by using acontainer (representatively, crucible) in which an EL material has beenaccommodated in advance by a material maker. Further, on the occasion ofinstallation, it is preferable to carry out without contact withatmospheric air, and on the occasion that it is transferred from amaterial maker, it is preferable to be introduced into the film formingchamber, in a state that the crucible is sealed hermetically in a secondcontainer. Preferably, the installation chambers 526R, 526G, 526B, 526H,526E having vacuum pumping means coupled to each film forming chamber506R, 506G, 506B, 506H, 506E are made to form vacuum or, inert gasatmosphere, and in this, the crucible is pulled out from the secondcontainer, and the crucible is installed in the film forming chamber. Inpassing, one example of the installation chamber is shown in FIG. 7, orFIG. 8.

Here, a figuration of a container for transferring will be concretelydescribed by use of FIG. 7(A). The second container which is used fortransfer and divided into a upper part (721 a) and a lower part (721 b)has fixing means 706 for fixing the first container which was disposedon the upper part of the second container, a spring 705 for pressurizingthe fixing means, a gas feed port 708 which was disposed on the lowerpart of the second container and which becomes a gas path for reducingand maintaining pressure of the second container, an O ring for fixing aupper part container 721 a and a lower part container 721 b, and afastener 702. In this second container, installed is the first container701 in which a purified deposition material was sealed. In passing, thesecond container may be formed by a material including stainless, andthe first container 701 may be formed by material having titanium.

In a material maker, the purified deposition material is sealed in thefirst container 701. And, through the O ring, the second upper part 721a and lower part 721 b are matched, and the upper part container 721 aand the lower part container 721 b are fixed by the fastener 702, andthe first container 701 is sealed hermetically in the second container.After that, through the gas feed port 708, pressure in the secondcontainer is reduced, and further, it is replaced by nitrogenatmosphere, and the spring 705 is adjusted, and the first container 705is fixed by the fixing means 706. In this manner, when an inside of thesecond container is held as vacuum, and reduced pressure, nitrogenatmosphere, it is possible to prevent even attachment of slight oxygenand water to the deposition material.

In this state, it is transferred to a light emitting apparatus maker,and the first container 701 is installed in a deposition chamber. Afterthat, by heating, a deposition material is sublimated, and filmformation of a deposition film is carried out.

In addition, it is preferable that other components, e.g., a filmthickness monitor (crystal oscillator etc.), a shutter, and so on aretransferred in the same manner without contact with atmospheric air, andinstalled in a deposition apparatus.

In addition, an installation chamber for pulling out the crucible(filled with a deposition material) which was vacuum-sealed in thecontainer without contact with atmospheric air, and for setting thecrucible to a deposition holder is coupled to a film forming chamber,and the crucible is transferred from the installation chamber by atransfer robot without contact with atmospheric air. It is preferablethat vacuum pumping means is also disposed in the installation chamber,and further, means for heating the crucible is also disposed.

By use of FIG. 7(A) and FIG. 7(B), a mechanism of installing thecontainer 701, which is sealed hermetically in the second container 721a, 721 b and transferred, in the film forming chamber will be described.

FIG. 7(A) describes a cross-section surface of the installation chamber705 which has a rotation table 707 over which the second container 721a, 721 b, in which the first container was accommodated, is mounted, atransfer mechanism for transferring the first container, and a liftmechanism 711. In addition, the installation chamber is allocated so asto be adjacent to the film forming chamber, and it is possible tocontrol atmosphere of the installation chamber by means for controllingatmosphere through the gas feed port. In passing, the transfer mechanismis not limited to such a configuration that the first container issandwiched (pinched) from a upper side of the first container 701 asdescribed in FIG. 7(B), and may be of such a configuration that thefirst container is transferred by sandwiching side surfaces thereof.

In the above installation chamber, in such a state that the fastener 702was released, the second container is allocated over a rotationalinstallation table 713. Since an inside is in a vacuum state, even ifthe fastener 702 was released, it does not move. Then, by the means forcontrolling atmosphere, an inside of the installation is made to be in areduced pressure state. When a pressure in the installation chamber anda pressure in the second container become equal, it becomes such a statethat a seal of the second container can be easily broken. And, by thelift mechanism 711, the upper part 721 a of the second container isdismounted, and the rotational installation table 713 is rotated arounda rotation axis 712 as an axis, and thereby, the lower part of thesecond container, and the first container are moved. And, the firstcontainer 701 is transferred to the deposition chamber by the transfermechanism, and the first container 701 is installed on a depositionsource holder (not shown in the figure).

After that, by heating means which was disposed in the deposition sourceholder, a deposition material is sublimated, and film formation isinitiated. At the time of this film formation, when a shutter (not shownin the figure), which was disposed in the deposition source holder, isopened, the sublimed deposition material flies in a direction of thesubstrate, and is deposited over the substrate, and a light emittinglayer (including a hole transport layer, a hole injection layer, anelectron transport layer, an electron injection layer) is formed.

And, after deposition was completed, the first container is lifted fromthe deposition source holder, and transferred to the installationchamber, and mounted over the lower part container (not shown in thefigure) of the second container which was placed over a rotation table804, and sealed hermetically by the upper part container 721 a. At thistime, it is preferable to seal the first container, the upper partcontainer, and the lower part container hermetically, by transferredcombination. In this state, the installation chamber 805 is made to beof atmospheric pressure, and the second container is pulled out from theinstallation chamber, and the fastener 702 is fixed, and transferred toa material maker.

In addition, an example of an installation chamber in which a pluralityof first containers 911 can be installed is shown in FIG. 8. In FIG.8(A), the installation chamber 905 has a rotation table 907 on which itis possible to mount a plurality of the first containers 911 or secondcontainers 912, a transfer mechanism 902 b for transferring the firstcontainer, and a lift mechanism 902 a, and a film forming chamber 906has a deposition source holder 903, and a mechanism (here, not shown inthe figure) for moving a deposition holder. FIG. 8(A) shows a top view,and FIG. 8(B) shows a perspective view of an inside of the installationchamber. In addition, the installation chamber 905 is placed through agate valve 900 so as to be adjacent to the film forming chamber 906, andit is possible to control atmosphere of the installation chamber, bymeans for controlling atmosphere, through a gas feed port. In passing,although it is not shown in the figure, a place in which a upper part(second container) 912, which was dismounted, is placed is disposedseparately.

Or, it may be designed in such a manner that a robot is provided in apretreatment chamber (installation chamber) which was coupled to thefilm forming chamber, and a deposition source in its entirety is movedfrom the film forming chamber to the pretreatment chamber, and in thepretreatment chamber, a deposition material is set to the depositionsource. That is, it may be designed as a manufacturing apparatus inwhich a deposition source is moved up to a pretreatment chamber. Bydoing this, it is possible to set the deposition source, with holding acleaning degree of the film forming chamber.

By doing this, it is possible to prevent a crucible and an EL material,which was accommodated in the crucible, from being contaminated. Inpassing, in the installation chambers 526R, 526G, 526B, 528H, 526E, itis possible to stock a metal mask.

By properly selecting EL materials which are placed in the film formingchambers 506R, 506G, 506B, 506H, 506E, as an entire light emittingdevice, it is possible to form a light emitting device which indicateslight emission of a single color (concretely, white color), or fullcolor (concretely, red color, green color, blue color). For example, incase of forming a green color light emitting device, if a cathode isformed, after a hole transport layer or a hole injection layer in thefilm forming chamber 506H, and a light emitting layer (G) in the filmforming chamber 506G, and an electron transport layer or an electroninjection layer in the film forming chamber 506E were sequentiallylaminated, it is possible to obtain the green color light emittingdevice. For example, in case of forming a full color light emittingdevice, if a cathode is formed after, using a deposition mask for R inthe film forming chamber 506R, a hole transport layer or a holeinjection layer, a light emitting layer (R), an electron transport layeror an electron injection layer are sequentially laminated, and using adeposition mask for G in the film forming chamber 506G, a hole transportlayer or a hole injection layer, a light emitting layer (G), an electrontransport layer or an electron injection layer are sequentiallylaminated, and using a deposition mask for B in the film forming chamber506B, a hole transport layer or a hole injection layer, a light emittinglayer (B), an electron transport layer or an electron injection layerare sequentially laminated, it is possible to obtain the full colorlight emitting device.

In passing, an organic compound layer for indicating light emission ofwhite color is, in case of laminating light emission layers havingdifferent light emission colors, roughly classified into a 3 wavelengthtype which includes 3 primary colors of red color, green color, bluecolor, and a 2 wavelength type which used a relation of complementarycolors of blue color/yellow color, or blue-green color/orange color. Itis possible to form a white color light emitting device in one filmforming chamber. For example, in case of obtaining the white color lightemitting device using the 3 wavelength type, prepared is a film formingchamber in which provided were a plurality of deposition source holderson which a plurality of crucibles were mounted, and in a firstdeposition source holder, aromatic diamine (TPD) is sealed, and in asecond deposition source holder, p-EtTAZ is sealed, and in a thirddeposition source holder, Alq₃ is sealed, and in a fourth depositionsource holder, an EL material in which NileRed, which is a red colorlight emitting coloring matter, was added to Alq₃, and in a fifthdeposition source holder, Alq₃ is sealed, and in this state, they areinstalled in each film chamber. And, the first through fifth depositionsource holders starts moving in sequence, and carry out deposition to asubstrate, and lamination of layers. Concretely speaking, TPD issublimated from the first deposition source holder by heating, anddeposited on an entire surface of the substrate. After that, p-EtTAZ issublimated from the second deposition source holder, and Alq₃ issublimated from the third deposition source holder, and Alq₃:NileRed issublimated from the fourth deposition source holder, and Alq₃ issublimated from the fifth deposition source holder, and deposited overan entire surface of the substrate. After that, if a cathode is formed,it is possible to obtain the white color light emitting device.

By the above-described process, after layers including organic compoundsare laminated as layers properly, the substrate is transferred from thetransfer chamber 504 to the hand-over chamber 507, and further, thesubstrate is transferred from the hand-over chamber 507 to the transferchamber 508, without contact with atmospheric air.

Then, by the transfer mechanism which is disposed in the transferchamber 508, the substrate is transferred to the film forming chamber510, and a cathode is formed. This cathode is a metal film (alloy suchas MgAg, MgIn, CaF₂, LiF, CaN, or a film formed by a co-depositionmethod of an element which belongs to a 1 family or a 2 family of theperiodic table and aluminum, or a laminated film of these) which isformed by a deposition method which used resistance heating. Inaddition, a cathode may be formed by using a sputtering method.

In addition, in case of fabricating a upper surface launching type lightemitting device, it is desirable that a cathode is transparent orsemi-transparent, and it is desirable that a thin film (1 nm-10 nm) ofthe above-described metal film, or a laminated layer of a thin film (1nm-10 nm) of the above-described metal film and a transparent conductivefilm is used as the cathode. In this case, by using the sputteringmethod, a film, which is composed of a transparent conductive film(ITO(indium oxide-tin oxide alloy), indium oxide-zinc oxide alloy(In₂O₃—ZnO), zinc oxide (ZnO) etc.), may be formed in the film formingchamber 509.

By the above-described processes, a light emitting device of a laminatedlayer configuration is formed.

In addition, it may be designed that it is transferred to the filmforming chamber 513 which was coupled to the transfer chamber 508, and aprotective film, which is composed of a silicon nitride film, or asilicon nitride oxide film, is formed for sealing. Here, in the filmforming chamber 513, a target which is composed of silicon, or a targetwhich is composed of silicon oxide, or a target which is composed ofsilicon nitride, is provided. For example, using the target which iscomposed of silicon, by changing film forming chamber atmosphere tonitrogen atmosphere or atmosphere including nitrogen and argon, it ispossible to form a silicon nitride film on a cathode. In addition, itmay be formed by use of a thin film in which a major component is carbon(a DLC film, a CN film, an amorphous carbon film) as a protective film,and a film forming chamber which used a CVD method may be disposedseparately. A diamond like carbon film (also called as DLC film) can beformed by a plasma CVD method (representatively, a RF plasma CVD method,a microwave CVD method, an electron cyclone resonance (ECR) CVD method,a heat filament CVD method etc.) a combustion-flame method, a sputteringmethod, an ion beam deposition method, a laser deposition method, etc.As reactive gas which is used for film formation, used are hydrogen gas,and carbon hydride series gas (e.g., CH₄, C₂H₂, C₂H₆ etc.), and it isionized by glow discharge, and ions are accelerated and bombarded to acathode to which a negative self bias was applied, to form a film. Inaddition, the CN film may be formed by using C₂H₄ gas and N₂ gas asreactive gas. In passing, the DLC film and the CN film are insulatingfilms which are transparent or semi-transparent to visible light. To betransparent to visible light means that a transmission factor of visiblelight is 80-100%, and to be semi-transparent to visible light means thata transmission factor of visible light is 50-80%.

In this embodiment, on a cathode, a protective layer, which comprises alaminated layer of a first inorganic insulating film, a stress relaxingfilm, and a second inorganic insulating film, is formed. For example, itmay be designed that, after the cathode was formed, it is transferred tothe film forming chamber 513, and the first inorganic insulating film isformed, and it is transferred to the film forming chamber 532, and thestress relaxing film (a layer including an organic compound, etc.) whichhas a hygroscopic property and transparency is formed by a depositionmethod, and further, it is transferred again to the film forming chamber513, and the second inorganic insulating film is formed.

Then, the substrate on which a light emitting device was formed, istransferred from the transfer chamber 508 to the hand-over chamber 511,without contact with atmospheric air, and further, transferred from thehand-over chamber 511 to the transfer chamber 514. Then, the substrateon which a light emitting device was formed, is transferred from thetransfer chamber 514 to the sealing chamber 516.

A seal substrate is set from outside to the load chamber 517, andprepared. In passing, in order to remove an impurity such as moisture,it is desirable to carry out anneal in advance in vacuum. And, in caseof forming a seal member for gluing the substrate on which a lightemitting device was formed with the seal substrate, the seal member isformed in the sealing chamber 527, and the seal substrate, on which theseal member was formed, is transferred to the seal substrate stockchamber 530. In passing, in the sealing chamber, a drying agent may bedisposed over the seal substrate. In passing, here, an example, in whichthe seal member was formed over the seal substrate, was shown, but inparticular, it is not restrictive, and the seal member may be formed onthe substrate on which a light emitting device was formed.

Then, the sealing chamber 516, the substrate and the seal substrate areglued together, and UV rays are irradiated to a pair of the gluedsubstrates by a ultraviolet ray irradiating mechanism which was disposedin the sealing chamber 516, to cure the seal member. In passing, here,as the seal member, ultraviolet ray cured resin was used, but if it isan adhesive agent, it is not particularly restrictive.

Then, the pair of glued substrates are transferred from the sealingchamber 516 to the transfer chamber 514, and then, from the transferchamber 514 to the pull-out chamber 519, and then, pulled out.

As above, by using the manufacturing apparatus shown in FIG. 6, until alight emitting device is completely sealed in a hermetically enclosedspace, it is not needed to be exposed to atmospheric air, and therefore,it becomes possible to fabricate a light emitting apparatus with highreliability. In passing, in the transfer chambers 514, 518, vacuum, andnitrogen atmosphere with atmospheric pressure are repeated, but, it isdesired that vacuum is maintained on a steady basis in the transferchambers 502, 504, 508.

In passing, although it is not shown in the figure here, disposed is acontrol apparatus for realizing automation by controlling a path throughwhich the substrate is moved to an individual processing chamber.

In addition, in the manufacturing apparatus shown in FIG. 6, thesubstrate, on which a transparent conductive film (or a metal film(TiN)) was disposed as an anode, is carried in, and a layer including anorganic compound was formed, and thereafter, a transparent orsemi-transparent cathode (e.g., a laminated layer of a thin metal film(Al, Ag) and a transparent conductive film) is formed, and thereby, itis also possible to form a upper surface launching type (or upper/lowersurfaces launching type) light emitting device. In passing, the uppersurface launching type light emitting device means a device which getsthrough a cathode and pulls out emitted light which was generated in anorganic compound layer.

In addition, in the manufacturing apparatus shown in FIG. 6, thesubstrate, on which a transparent conductive film was formed as ananode, is transferred, and after a layer including an organic compoundwas formed, a cathode, which comprising a metal film (Al, Ag), isformed, and thereby, it is also possible to form a lower surfacelaunching type light emitting device. In passing, the lower surfacelaunching type light emitting device means a device which pulls outemitted light which was generated in an organic compound layer from ananode which is a transparent electrode toward TFT, and further, whichgets it through the substrate.

In addition, it is possible to freely combine this embodiment with theembodiment mode 1, the embodiment mode 2, the embodiment mode 3, theembodiment mode 4 or the embodiment 1.

Embodiment 3

In this embodiment, an example for fabricating a light emittingapparatus (upper surface launching configuration) which had a lightemitting device in which an organic compound layer is used as a lightemitting layer, on a substrate which has an insulating surface is shownin FIG. 9.

In passing, FIG. 9(A) is a top view showing a light emitting apparatus,and FIG. 9(B) is a cross-sectional view in which FIG. 9(A) was cut withA-A′. 1101 shown by a dotted line designates a source signal line drivecircuit, and 1102 designates a pixel portion, and 1103 designates a gatesignal line drive circuit. In addition, 1104 designates a transparentseal substrate, and 1105 designates a first seal member, and an insidewhich was surrounded by the first seal member is filled with atransparent second seal member 1107. In passing, in the first sealmember 1105, included is a gap member for holding a substrate interval.

In passing, 1108 designates a wiring for transferring a signal which isimputed to the source signal line drive circuit 1101 and the gate signalline drive circuit 1103, and it accepts a video signal and a clocksignal from FPC (Flexible Print Circuit) 1109 which becomes an externalinput terminal. In passing, here, only FPC is shown in the figure, but aprinted wiring board (PWB) may be attached to this FPC.

Next, a cross-sectional configuration will be described by use of FIG.9(B). A drive circuit and a pixel portion are formed over a substrate1110, but here, the source signal line drive circuit 1101 as the drivecircuit and the pixel part 1102 are shown.

In passing, in the source signal line drive circuit 1101, formed is aCMOS circuit in which a n-channel type TFT 1123 and a p-channel type TFT1124 were combined. In addition, TFT which forms the drive circuit maybe formed by publicly known CMOS circuit, PMOS circuit or NMOS circuit.In addition, in this embodiment, shown was a driver integral type inwhich a drive circuit was formed over a substrate, but it is notnecessary required, and it is possible to form outside not but over thesubstrate. In addition, a configuration of TFT in which a polysiliconfilm is used as an active layer is not particularly restrictive, and maybe a top gate type TFT, and may be a bottom gate type TFT.

In addition, the pixel portion 1102 is formed by a plurality of pixelswhich includes a switching TFT 1111, a current control TFT 1112, and afirst electrode (anode) 1113 which was electrically connected to itsdrain. As the current control TFT 1112, either a n-channel type TFT or ap-channel type TFT may be acceptable, but in case that it is connectedto an anode, it is desirable to use a p-channel type TFT. In addition,it is desirable to properly dispose holding capacity (not shown in thefigure). In passing, here, among pixels which were placed in countlessnumbers, only a cross-sectional configuration of one pixel was shown,and an example in which 2 TFTs were used for that one pixel was shown,but TFTs of 3 pieces, or more than that, may be properly used.

Here, since it is of such a configuration that the first electrode 1113is in directly contact with a drain of TFT, it is desirable that a lowerlayer of the first electrode 1113 is made to be a material layer whichcan take an ohmic contact with a drain which comprises silicon, and atop layer which is in contact with a layer including an organic compoundcomprises a material with a large work function. For example, ifrealized is a 3 layer configuration of a titanium nitride film, a filmwhose main component is aluminum, and a titanium nitride film,resistance as a wiring is low, and a good ohmic contact is taken, and itis possible to function as an anode. In addition, the first electrode1113 may be a single layer of a titanium nitride film, a chromium film,a tungsten film, a Zn film, a PT film and so on, and a laminated layerof 3 layers or more may be used.

In addition, over both sides of the first electrode (anode) 1113, formedis an insulator (called as bank, partition wall, barrier, mound) 1114.The insulator 1114 may be formed by an organic resin film or aninsulating film which includes silicon. Here, as the insulator 1114,using a positive type photosensitive acryl resin film, an insulator of ashape shown in FIG. 9 is formed.

In order to make a coverage better, it is designed in such a manner thata curved surface having curvature is formed on a upper end part or alower end part of the insulator 1114. For example, in case that positivetype photosensitive acryl was used as a material of the insulator 1114,it is desirable to make only the upper end part of the insulator 1114hold a curved surface having a curvature radius (0.2 μm-3 μm). Inaddition, as the insulator 1114, it is possible to use any one of anegative type which becomes irresolvable in etchant by photosensitivelight, and a positive type which becomes resolvable in etching by light.

In addition, the insulator 1114 may be covered with a protective filmwhich comprises an aluminum nitride film, an aluminum oxide film, a thinfilm whose main component is carbon, or a silicon nitride film.

In addition, on the first electrode (anode) 1113, a layer 1115 whichincludes an organic compound is selectively formed by a depositionmethod, over introducing monosilane gas. Further, over the film 1115which includes an organic compound, a second electrode (cathode) 1116 isformed. As the cathode, a material with a small work function (Al, Ag,Li, Ca, or these alloys MgAg, MgIn, AlLi, CaF₂, or CaN) may be used.Here, in order that emitted light is penetrated, as the second electrode(cathode) 1116, used is a laminated layer of a metal thin film whosefilm thickness was thinned, and a transparent conductive electrode(ITO(indium oxide-tin oxide alloy), indium oxide-zinc oxidealloy(In₂O₃—ZnO), zinc oxide(ZnO) etc.). In this manner, a lightemitting device 1118, which comprises the first electrode (anode) 1113,the layer 1115 which includes an organic compound, and the secondelectrode (cathode) 1116, is formed. In this embodiment, as the layer1115 which includes an organic compound, an aromatic diamine layer(TPD), a p-EtTAZ layer, an Alq₃ layer, an Alq₃ layer in which Nile redwas doped, and an Alq₃ layer are laminated in sequence, to obtain whitecolor light emission. In this embodiment, since the light emittingdevice 1118 is an example of white color light emission, a color filter(for the purpose of simplification, an overcoat layer is not shown inthe figure, here), which comprises a color layer 1131 and a lightshielding layer (BM) 1132, is disposed.

In addition, if layers including organic compounds by which lightemissions of R, G, B are obtained is selectively formed, it is possibleto obtain full-color display even if a color filter is not used.

In addition, in order to seal the light emitting device 1118, atransparent protective layer 1117 is formed. As this transparentprotective layer 1117, it is preferable to use an insulating film whichis obtained by a sputter method (DC system or RF system) and a PCVDmethod and in which silicon nitride or silicon nitride oxide is a maincomponent, a thin film in which carbon is a main component (DLC film, CNfilm etc.), or a laminated layer of these. If formed in atmosphereincluding nitrogen and argon, using a silicon target, it is possible toobtain a silicon nitride film with a high blocking effect against animpurity such as moisture and alkali metal. In addition, a siliconnitride target may be also used. In addition, the transparent protectivelayer may be also formed by using a film forming apparatus which usedremote plasma. In addition, in order to have emitted light penetratethrough the transparent protective layer, it is preferable that a filmthickness of the transparent protective layer is as thin as possible.

In addition, in order to seal the light emitting device 1118, underinert gas, the seal substrate 1104 is glued by the first seal member1105 and the second seal member 1107. In passing, as the first sealmember 1105, the second seal member 1107, it is preferable to use epoxyseries resin. In addition, it is desired that the first seal member1105, and the second seal member 1107 are of a material which does notpass moisture and oxygen as far as possible.

In addition, in this embodiment, as a material which configures the sealsubstrate 1104, it is possible to use a plastic substrate whichcomprises FRP (Fiberglass-Reinforced Plastics), PVF (PolyVinylFluoride), a mylar, polyester or acryl etc. In addition, after the sealsubstrate 1104 was glued by using the first seal member 1105 and thesecond seal member 1107, it is possible to seal by a third seal member,so as to further cover a side surface (exposed surface).

By doing the foregoing, by encapsulating a light emitting device in thefirst seal member 1105, the second seal member 1107, it is possible tocompletely shield the light emitting device from outside, and it ispossible to prevent a substance such as moisture and oxygen, which urgesdeterioration of an organic compound layer from being intruded fromoutside. Therefore, it is possible to obtain a light emitting devicewith high reliability.

In addition, if a transparent conductive film is used as the firstelectrode 1113, it is possible to fabricate a both surface lightemission type light emitting apparatus.

In addition, in this embodiment, shown was an example of such aconfiguration (hereinafter, called as upper surface launchingconfiguration) that a layer, which includes an organic compound, isformed over an anode, and a cathode, which is a transparent electrode,is formed over the layer which includes an organic compound, but aconfiguration which has a light emitting device in which a layer, whichincludes an organic compound, is formed over an anode, and a cathode isformed over an organic compound layer, and in which emitted light, whichwas generated in the layer which includes an organic compound, is pulledout from the anode, which is a transparent electrode, toward TFT(hereinafter, called as lower surface launching configuration) may beused.

Here, one example of a light emitting apparatus of the lower surfacelaunching configuration is shown in FIG. 10.

In passing, FIG. 10(A) is a top view showing a light emitting apparatus,and FIG. 10(B) is a cross-sectional view in which FIG. 10(A) was cutalong A-A′. 1201 shown by a dotted line designates a source signal linedrive circuit, and 1202 designates a pixel portion, and 1203 designatesa gate signal line drive circuit. In addition, 1204 designates a sealsubstrate, and 1205 designates a seal member in which included is a gapmember for holding an interval of a hermetically enclosed space, and aninside which was surrounded by the seal member 1205 is filled with inertgas (representatively, nitrogen). As to an inside space which wassurrounded by the seal member 1205, minute amounts of moisture isremoved by a drying agent 1207, and it is sufficiently dried.

In passing, 1208 designates a wiring for transferring a signal which isimputed to the source signal line drive circuit 1201 and the gate signalline drive circuit 1203, and it accepts a video signal and a clocksignal from FPC (Flexible Print Circuit) 1209 which becomes an externalinput terminal.

Next, a cross-sectional configuration will be described by use of FIG.10(B). A drive circuit and a pixel portion are formed over a substrate1210, but here, the source signal line drive circuit 1201 as the drivecircuit and the pixel portion 1202 are shown. In passing, in the sourcesignal line drive circuit 1201, formed is a CMOS circuit in which an-channel type TFT 1223 and a p-channel type TFT 1224 were combined.

In addition, the pixel portion 1202 is formed by a plurality of pixelswhich includes a switching TFT 1211, a current control TFT 1212, and afirst electrode (anode) 1213 which comprises a transparent conductivefilm electrically connected to its drain.

Here, it is of such a configuration that the first electrode 1213 isformed so as to be partially overlapped with a connection electrode, andthe first electrode 1213 is electrically connected to a drain region ofTFT through the connection electrode. The first electrode 1213 hastransparency, and it is desired to use a conductive film with a largework function (ITO(indium oxide-tin oxide alloy), indium oxide-zincoxide alloy(In₂O₃—ZnO), zinc oxide(ZnO) etc.).

In addition, over both ends of the first electrode (anode) 1213, formedis an insulator (called as bank, partition wall, barrier, mound) 1214.In order to make a coverage better, it is designed in such a manner thata curved surface having curvature is formed over a upper end part or alower end part of the insulator 1214. In addition, the insulator 1214may be covered with a protective film which comprises an aluminumnitride film, an aluminum nitride oxide film, a thin film in whichcarbon is a main component, or a silicon nitride film.

In addition, over the first electrode (anode) 1213, a layer 1215 whichincludes an organic compound is selectively formed by carrying outdeposition of an organic compound material, over introducing monosilanegas. Further, over the film 1215 which includes an organic compound, asecond electrode (cathode) 1216 is formed. As the cathode, a materialwith a small work function (Al, Ag, Li, Ca, or these alloys MgAg, MgIn,AlLi, CaF₂, or CaN) may be used. In this manner, a light emitting device1218, which comprises the first electrode (anode) 1213, the layer 1215which includes an organic compound, and the second electrode (cathode)1216, is formed. Here, the light emitting device 1218 is one of lightemitting devices which can obtain single color light emission of R, C,or B, and full-color is realized by 3 light emitting devices in whichlayers, which include organic compounds by which light emissions of R,G, B are obtained, were selectively formed.

In addition, in order to seal the light emitting device 1218, aprotective layer 1217 is formed. As this transparent protective layer1217, it is preferable to use an insulating film which is obtained by asputter method (DC system or RF system) and a PCVD method and in whichsilicon nitride or silicon nitride oxide is a main component, or a thinfilm in which carbon is a main component (DLC film, CN film etc.), or alaminated layer of these. If formed in atmosphere including nitrogen andargon, using a silicon target, it is possible to obtain a siliconnitride film with a high blocking effect against an impurity such asmoisture and alkali metal. In addition, a silicon nitride target may bealso used. In addition, the protective layer may be also formed by usinga film forming apparatus which used remote plasma.

In addition, in order to seal the light emitting device 1218, underinert gas, the seal substrate 1204 is glued by the seal member 1205. Inthe seal substrate 1204, a concave part, which was formed by a sandblastmethod, has been formed in advance, and the drying agent 1207 is gluedto the concave part. In passing, as the seal member 1205, it ispreferable to use epoxy series resin. In addition, it is desired thatthe seal member 1205 is of a material which does not pass moisture andoxygen as far as possible.

In addition, in this embodiment, as a material which configures the sealsubstrate 1104 having the concave part, it is possible to use a plasticsubstrate which comprises FRP (Fiberglass-Reinforced Plastics), PVF(PolyVinyl Fluoride), a mylar, polyester or acryl etc. In addition, itis possible to seal by a metal can, to an inside of which a drying agentwas glued.

In addition, it is possible to freely combine this embodiment with anyone of the embodiment modes 1 through 4, the embodiment 1, or theembodiment 2.

Embodiment 4

In this embodiment, a cross-sectional configuration of one pixel, inparticular, shapes of a connection of a light emitting device and TFT, apartition wall which is located between pixels will be described.

In FIG. 11(A), 40 designates a substrate, and 41 designates a partitionwall (also called as bank), and 42 designates an insulating film, and 43designates a first electrode (anode), and 44 designates a layer whichincludes an organic compound, and 45 designates a second electrode(cathode), and 46 designates TFT.

In TFT 46, 46 a designates a channel forming region, and 46 b, 46 cdesignate a source region or a drain region, and 46 designates a gateelectrode, and 46 e, 46 f designate a source electrode or a drainelectrode. Here, a top-gate type TFT is shown, but it is notrestrictive, and an inversely staggered type TFT may also be used, and aforwardly staggered type TFT may also be used. In passing, 46 fdesignates an electrode for connecting with TFT 46 by being overlappedwith the first electrode 43 partially in contact with it.

In addition, a cross-sectional configuration, which is partiallydifferent from FIG. 11(A), is shown in FIG. 11(B).

In FIG. 11(B), an overlapping way of the first electrode and theelectrode is different from the configuration of FIG. 11(A), and afterthe first electrode was patterned, the electrode is formed so as to bepartially overlapped, and thereby, it is connected to TFT.

In addition, a cross-sectional configuration, which is partiallydifferent from FIG. 11(A), is shown in FIG. 11(C).

In FIG. 11(C), 1 layer of an interlayer insulating film is furtherdisposed, and the first electrode is connected to the electrode of TFTthrough a contact hole.

In addition, as a cross-sectional shape of the partition wall 41, asshown in FIG. 11(D), it may be made also as a taper shape. It isobtained by etching non-photosensitive organic resin or an inorganicfilm, after a resist was exposed to light by using a photolithographymethod.

In addition, if positive type photosensitive organic resin is used, itis possible to make a shape as shown in FIG. 11(E), a shape having acurved surface over a upper end part.

In addition, if negative type photosensitive organic resin is used, itis possible to make a shape as shown in FIG. 11(F), a shape havingcurved surfaces over a upper end part and a lower end part.

In addition, it is possible to freely combine this embodiment with theembodiment mode 1, the embodiment mode 2, the embodiment mode 3, theembodiment mode 4, the embodiment 1, the embodiment 2, or the embodiment3.

Embodiment 5

In this embodiment, an example of fabricating a passive matrix typelight emitting apparatus (also called as a simple matrix type lightemitting apparatus) will be shown.

Firstly, over a glass substrate, a plurality of first wirings are formedin a stripe shape by a material such as ITO (material which becomes ananode). Then, a partition wall, which comprises a resist orphotosensitive resin, is formed so as to surround a region which becomesa light emitting region. Then, by a deposition method, a layer whichincludes an organic compound is formed in a region which was surroundedby the partition wall. In case of realizing full-color display, amaterial is properly selected, and over introducing monosilane gas, thelayer which includes an organic compound is formed by a depositionmethod. Then, over the partition wall and the layer which includes anorganic compound, a plurality of second wirings in a stripe shape areformed by a metal material (material which becomes a cathode) such as Alor Al alloy, so as to be crossed with the plurality of first wiringswhich comprises ITO. By the above-described processes, it is possible toform a light emitting device in which the layer including an organiccompound was used as a light emitting layer.

Then, a seal substrate is glued by a seal member, or sealed by disposinga protective film over the second wiring. As the seal substrate, used isa glass substrate, a plastic substrate which comprises polypropylene,polypropylenesulfide, polycarbonate, polyetherimide,polyphenylenesulfide, polyphenyleneoxide, polysulfone, orpolyphtalamide.

One example of a cross-sectional view of a display apparatus of thisembodiment is shown in FIG. 12(A).

Disposed is a pixel portion 1321 in which a first electrode and a secondelectrode are crossed over a main surface of a substrate 1300, and alight emitting device was formed at its crossing part. That is, formedis the pixel part 1321 in which luminescent pixels are arranged in amatrix shape. The number of pixels is 640×480 dots in case of VGAspecification, 1024×768 dots in case of XGA specification, and 1365×1024dots in case of SXGA, or 1600×1200 dots in case of UXGA specification,and the number of the first electrodes and the second electrodes aredisposed in accordance with it. Further, on a peripheral part of thepixel portion 1321, which is an end part of the substrate 1301, disposedis an input terminal part in which formed was a terminal pad which isconnected to an external circuit.

In the display apparatus shown in FIG. 12(A), in the pixel portion, overa main surface of the substrate 1300, formed are a first electrode 1302which is extended in a left-right direction, a thin film 1305 (since amedium, which emits light by electroluminescence, is included, as amatter of convenience, it is called as EL layer in the followingexplanation) which includes an illuminant formed over its upper layer,and a second electrode 1306 which is formed over its upper layer andextended in a up-down direction, and over its crossing part, a pixel isformed. That is, by forming the first electrode 1302 and the secondelectrode 1306 row-wise and column-wise, pixels are disposed in a matrixshape. An input terminal is formed by the same material as the firstelectrode or the second electrode. The number of this input terminal isthe same number of the first electrode and the second electrode whichwere disposed row-wise and column-wise.

A cross-sectional shape of the partition wall 1304 has a curved surfaceshape from a lower end part which is in contact with the first electrode1302 to a upper end part. The curved surface shape is a shape which hasat least one curvature radius, a center of which is located at thepartition wall or a lower layer side thereof, or, a shape which has atleast one first curvature radium, a center of which is located at alower end part which is in contact with the first electrode 1302 and atan outside of the partition wall 1304, and at least one second curvatureradium, a center of which is located at a upper end part of thepartition wall 1304 and at the partition wall or a lower layer sidethereof. The cross-sectional shape may be such a thing that curvature iscontinuously changed from the lower end part of the partition wall 1304to the upper end part. The EL layer is formed along the curved surfaceshape, and stress is mitigated by the curved surface shape. That is, ina light emitting device in which different members were laminated, thereis such an operation that strain due to its thermal stress is mitigated.

Shown is such a mode that an opposite substrate 1350 for sealing thepixel part 1321 is firmly fixed by a seal member 1341. In a spacebetween the substrate 1301 and the opposite substrate 1350, inert gasmay be filled, and an organic resin material 1340 may be encapsulated.In any case, since a light emitting device in the pixel portion 1321 iscoated with a barrier insulating film 1307, it is possible to preventdeterioration due to an extrinsic impurity, even if a drying agent isnot disposed particularly.

In addition, FIG. 12(A) corresponds to each pixel of the pixel part1321, and at the opposite substrate 1350 side, formed are single colorlayers 1342-1344. A planarization layer 1345 prevents a step due to thesingle color layer. On the other hand, FIG. 12(B) is of such a structurethat, at the substrate 1301 side, disposed were the single color layers1342-1344, and over the planarization film 1345, the first electrode1302 is formed. In addition, FIG. 12(B) is different from FIG. 12(A) ina light emitting direction. In passing, the same reference numerals areused for the same portions.

In addition, this invention is not restricted to a full-color displayapparatus, and can be also implemented for a single color light emittingapparatus, for example, a surface light source, an electric illuminationapparatus.

In addition, it is possible to freely combine this embodiment with anyone of the embodiment modes 1 through 4, the embodiment 1, or theembodiment 2.

Embodiment 6

By incorporating a light emitting apparatus which was obtained byimplementing this invention with a display part, it is possible tofabricate an electronic equipment. As the electronic equipment, citedare a video camera, a digital camera, a goggle type display (headmountdisplay), a navigation system, a sound reproducing apparatus (car audio,audio component stereo etc.), a notebook type personal computer, a gameequipment, a portable information terminal (mobile computer, portabletelephone, portable type game machine or electronic book etc.), an imagereproducing apparatus which had a recording medium (concretely speaking,an apparatus which reproduces a recording medium such as DigitalVersatile Disc (DVD), and had a display which can display its image) andso on. Concrete examples of those electronic equipments are shown inFIG. 13.

FIG. 13(A) shows a television, which includes a housing 2001, a supporttable 2002, a display part 2003, a speaker part 2004, a video inputterminal 2005, and so on. This invention is applicable to the displaypart 2003. In passing, all information display televisions, such aspersonal computer use, TV broadcasting receiving use, and advertisementdisplay use, are included.

FIG. 13(B) shows a digital camera, which includes a main body 2101, adisplay part 2102, an image receiving part 2103, an operating key 2104,an external connection port 2105, a shutter 2106, and so on. Thisinvention is applicable to the display part 2102.

FIG. 13(C) shows a notebook type personal computer, which includes amain body 2201, a housing 2202, a display part 2203, a keyboard 2204, anexternal connection port 2205, a pointing mouse 2206, and so on. Thisinvention is applicable to the display part 2203.

FIG. 13(D) shows a mobile computer, which includes a main body 2301, adisplay part 2302, a switch 2303, an operating key 2304, an infraredport 2305, and so on. This invention is applicable to the display part2302.

FIG. 13(E) shows a portable type image reproducing apparatus (concretelyspeaking, DVD reproducing apparatus) which had a recording medium, whichincludes a main body 2401, a housing 2402, a display part A 2403, adisplay part B 2404, a recording medium (DVD etc.) reading part 2405, anoperating key 2406, a speaker part 2407, and so on. The display part A2403 displays mainly image information, and the display part B 2404displays mainly textual information, and this invention is applicable tothe display parts A, B, 2403, 2404. In passing, a home-use gameequipment etc. are also included in the image reproducing apparatuswhich had a recording medium.

FIG. 13(F) shows a game equipment, which includes a main body 2501, adisplay part 2505, an operating switch 2504, and so on.

FIG. 13(G) shows a video camera, which includes a main body 2601, adisplay part 2602, a housing 2603, an external connection port 2604, aremote controller receiving part 2605, an image receiving part 2606, abattery 2607, a sound input part 2608, an operating key 2609, and so on.This invention is applicable to the display part 2602.

FIG. 13(H) shows a portable telephone, which includes a main body 2701,a housing 2702, a display part 2703, a sound input part 2704, a soundoutput part 2705, an operating key 2706, an external connection port2707, an antenna 2708, and so on. This invention is applicable to thedisplay part 2703. In passing, by displaying a white color character ona black color background on the display part 2703, it is possible tosuppress a consumption current of a portable telephone.

As above, a display apparatus which was obtained by implementing thisinvention may be used as a display part of every electronic equipment.In passing, in the electronic equipment of this embodiment mode, a lightemitting apparatus, which was fabricated by using either configurationof the embodiment modes 1 through 4, the embodiments 1 through 5, may beused.

Embodiment 7

In this embodiment, an example of an inline type manufacturingapparatus, in which fabrications from a first electrode up to sealingwere totally automated, is shown in FIG. 14.

FIG. 14 shows an inline type manufacturing apparatus which has gates1000 a-1000 u, transfer chambers 1002, 1004 a, 1014, a hand-over chamber1011, a first film forming chamber 1006H, a second film forming chamber1006B, a third film forming chamber 1006G, a fourth film forming chamber1006R, a fifth film forming chamber 1006E, an auxiliary film formingchamber 1006G″, an auxiliary film forming chamber 1006R″, an auxiliaryfilm forming chamber 1006B″, other film forming chambers 1009, 10010,1013, installation chambers in which deposition sources are installed1026R, 1026G, 1026B, 1026R″, 1026G″, 1026B″, 1026E, 1026H, apretreatment chamber 1003 a, a sealing chamber 1018, a sealing chamber1016, a seal substrate stock chamber 1030, a substrate carry-in chamber1020, and a pull-out chamber 1019. In passing, in the transfer chamber1004 a, disposed is a transfer mechanism 1004 b which has a plurality ofarms for transferring or inverting the substrate 1004 c, and in othertransfer chambers, transfer mechanisms are disposed, respectively, inthe same manner.

Hereinafter, a procedure for carrying a substrate, on which an anode(first electrode) and an insulator (partition wall) for covering an endpart of the anode were disposed in advance, in the manufacturingapparatus shown in FIG. 14, to fabricate a light emitting apparatus willbe shown.

Firstly, in the substrate carry-in chamber 1020, the above-describedsubstrate is set. Ii is designed to be able to correspond to such a casethat the substrate is a large size substrate (e.g., 600 mm×720 mm), andsuch a case that it is a normal substrate (e.g., 127 mm×127 mm). Thesubstrate carry-in chamber 1020 is coupled to a vacuum pumpingprocessing chamber, and it is desirable that, after vacuum pumping wascarried out, inert gas is introduced, and atmospheric pressure isrealized.

The substrate (substrate on which an anode, and an insulator forcovering an end part of the anode were disposed), which was set to thesubstrate carry-in chamber, is transferred to the transfer chamber 1002.In order that moisture and oxygen do not exist in the transfer chamber1002 to the utmost, it is preferable that it has been vacuated inadvance and vacuum has been maintained.

In addition, before it is set to the cassette chamber, for the purposeof reducing point defects, it is preferable to clean a surface of afirst electrode (anode) by a porous sponge (representatively, made byPVA (polyvinyl alcohol), made by nylon, etc.) in which a surface-activeagent (alkalescent) was contained, and to remove dusts over the surface.In addition, before a layer which includes an organic compound isformed, in order to remove moisture and other gas which are included inthe above-described substrate, it is preferable to carry out anneal fordeairing in vacuum, and anneal may be carried out in the transferchamber 1002, or the pretreatment chamber 1003 a.

In addition, in the substrate transfer mechanism which was disposed inthe transfer chamber 1002, a substrate inverting mechanism is provided,and it is possible to inverse the substrate properly.

In addition, as for the above-described vacuum pumping processingchamber, a magnetic levitation type turbo molecular pump, a cryopump, ora dry pump is provided.

In addition, in case that it is intended to remove a film which wasformed at a unnecessary place and includes an organic compound, it istransferred to the pretreatment chamber 1003 a, and a laminated layer ofan organic compound film may be selectively removed. The pretreatmentchamber 1003 a has plasma generating means, and by exciting one kind orplural kinds of gasses, which were selected from Ar, H, F, and O togenerate plasma, dry etching is carried out. In addition, in order thatultraviolet ray irradiation can be carried out as anode surfacetreatment, a UV irradiation mechanism may be provided in thepretreatment chamber 1003 a.

In addition, in order to eliminate shrink, it is desirable to carry outvacuum heating right before deposition of a film which includes anorganic compound, and in order to completely remove moisture and othergas which are included in the above-described substrate, in the transferchamber 1002, anneal for deairing is carried out in vacuum (5×10⁻³ Torr(0.665 Pa) or less, preferably, 10⁻⁴-10⁻⁶ Torr).

Then, after the above-described vacuum heating was carried out, it istransferred to the film forming chamber 1006H, and deposition is carriedout. Then, the substrate is properly transferred from the transferchamber 1002 to the film forming chambers 1006R, 1006G, 1006B, 1006R″,1006G″, 1006B″, 1006E which were coupled to the transfer chamber 1004 a,and an organic compound layer, which becomes a hole injection layer, ahole transport layer, a light emitting layer, an electron transportlayer, or an electron injection layer and which is composed of lowmolecules, is properly formed.

In addition, a film forming chamber for forming a hole injection layer,which is composed of a polymeric material, by an ink-jet method and aspin coating method etc. may be disposed separately. In addition, thesubstrate is placed vertically, and a film may be formed by an ink-jetmethod in vacuum.

In addition, in case that PEDOT/PSS was formed as a film by a spin coatmethod, since a film is formed over an entire surface, it is desirableto selectively remove an end surface and a peripheral part of asubstrate, a terminal part, a connection region of a cathode and a lowerpart wiring, and so on, and it is desirable to remove by O₂ ashing etc.in the pretreatment chamber 1003 a.

Here, the film forming chambers 1006R, 1006G, 1006B, 1006R″, 1006G″,1006B″, 1006E, 1006H will be described.

In each film forming chamber 1006R, 1006G, 1006B, 1006R″, 1006G″,1006B″, 1006E, 1006H, a movable deposition source holder (depositioncell) is installed. That is, it corresponds to the film forming chamberof the above-described embodiment mode 2, which was shown in FIG. 2. Asshown in the above-described embodiment mode 2, deposition is carriedout over introducing material gas on the occasion of deposition. As thematerial gas, concretely speaking, one kind or a plurality of kinds,which were selected from silane series gas (monosilane, disilane,trisilane etc.), SiF₄, GeH₄, GeF₄, SnH₄, or hydro carbon series gas(CH₄, C₂H₂, C₂H₄, C₆H₆ etc.), may be used. By intentionally introducingmaterial gas at the time of film formation, and by having a component ofthe material gas included in an organic compound film, it is possible tomake a high-density film. By having a component of a material gasincluded in an organic compound film, it is possible to block animpurity such as oxygen and moisture which causes deterioration frombeing intruded, diffused in a film, and to improve reliability of alight emitting device.

In passing, as to this deposition source holder, a plurality of them areprepared, and a plurality of containers (crucibles) in which ELmaterials were sealed are properly provided, and they are disposed inthe film forming chamber in this state. By setting a substrate by aface-down system, and by carrying out positional alignment of adeposition mask by CCD etc., and by carrying out deposition by aresistance heating method, it is possible to carry out film formationselectively. In passing, a mask stock chamber for storing a depositionmask may be disposed.

For installation of EL materials in these film forming chambers, it ispreferable to use the manufacturing system which was shown in FIG. 7,FIG. 8 of the above-described embodiment 1. That is, it is preferable tocarry out film formation by using a container (representatively,crucible) in which an EL material has been accommodated in advance by amaterial maker. Further, on the occasion of installation, it ispreferable to carry out without contact with atmospheric air, and on theoccasion that it is transferred from a material maker, it is preferableto be introduced into the film forming chamber, in a state that thecrucible is sealed hermetically in a second container. Preferably, theinstallation chambers 1026R, 1026G, 1026B, 1026R″, 1026G″, 1026B″,1026H, 1026E having vacuum pumping means coupled to each film formingchamber 1006R, 1006G, 1006B, 1006R″, 1006G″, 1006B″, 1006E, 1006H aremade to form vacuum or, inert gas atmosphere, and in this state, thecrucible is pulled out from the second container, and the crucible isinstalled in the film forming chamber.

By doing this, it is possible to prevent a crucible, and an EL material,which was accommodated in the crucible, from being contaminated. Inpassing, it is possible to stock metal masks in the installationchambers 1026R, 1026G, 1026B, 1026R″, 1026G″, 1026B″, 1026H, 1026E.

By properly selecting EL materials which are placed in the film formingchambers 1006R, 1006G, 1006B, 1006R″, 1006G″, 1006B″, 1006E, 1006H, asan entire light emitting device, it is possible to form a light emittingdevice which indicates light emission of a single color (concretely,white color), or full color (concretely, red color, green color, bluecolor). For example, in case of forming a green color light emittingdevice, if a cathode is formed, after a hole transport layer or a holeinjection layer in the film forming chamber 1006H, and a light emittinglayer (G) in the film forming chamber 1006G, and an electron transportlayer or an electron injection layer in the film forming chamber 1006Ewere sequentially laminated, it is possible to obtain the green colorlight emitting device. For example, in case of forming a full colorlight emitting device, using a deposition mask for R in the film formingchamber 1006R, a hole transport layer or a hole injection layer, a lightemitting layer (R), an electron transport layer or an electron injectionlayer are sequentially laminated, and using a deposition mask for G inthe film forming chamber 1006G, a hole transport layer or a holeinjection layer, a light emitting layer (G), an electron transport layeror an electron injection layer are sequentially laminated, and using adeposition mask for B in the film forming chamber 1006B, a holetransport layer or a hole injection layer, a light emitting layer (B),an electron transport layer or an electron injection layer aresequentially laminated, it is possible to obtain the full color lightemitting device.

In addition, by utilizing the auxiliary film forming chambers 1006R″,1006G″, 1006B″, without stopping a line even during such a period thatcleaning is carried out in the film forming chambers 1006R, 1006G,1006B, it is possible to fabricate a panel. In addition, it is possibleto increase the number of panels by activating both sides.

By the above-described process, layers which include organic compoundswere laminated properly, and thereafter, by the transfer mechanism whichis disposed in the transfer chamber 1004 a, the substrate is transferredto the film forming chamber 1010, and a cathode is formed. This cathodeis a metal film (alloy such as MgAg, MgIn, CaF₂, LiF, CaN, or a filmformed by a co-deposition method of an element which belongs to a 1family or a 2 family of the periodic table and aluminum, or a laminatedfilm of these) which is formed by a deposition method which usedresistance heating. In addition, a cathode may be formed by using asputtering method.

In addition, in case of fabricating a upper surface launching type lightemitting device, it is desirable that a cathode is transparent orsemi-transparent, and it is desirable that a thin film (1 nm-10 nm) ofthe above-described metal film, or a laminated layer of a thin film (1nm-10 nm) of the above-described metal film and a transparent conductivefilm is used as the cathode. In this case, by using a sputter method, afilm, which comprising a transparent conductive film (ITO(indiumoxide-tin oxide alloy), indium oxide-zinc oxide alloy (In₂O₃—ZnO), zincoxide (ZnO) etc.), may be formed in the film forming chamber 1009.

By the above-described processes, a light emitting device of a laminatedlayer configuration is formed.

In addition, it may be designed that it is transferred to the filmforming chamber 1013 which was coupled to the transfer chamber 1004 a,and a protective film, which comprises a silicon nitride film, or asilicon nitride oxide film, is formed for sealing. Here, in the filmforming chamber 1013, a target which comprises silicon, or a targetwhich comprises silicon oxide, or a target which comprises siliconnitride, is provided. For example, using the target which comprisessilicon, by changing film forming chamber atmosphere to nitrogenatmosphere or atmosphere which includes nitrogen and argon, it ispossible to form a silicon nitride film on a cathode. In addition, itmay be formed by use of a thin film in which carbon is a major component(a DLC film, a CN film, an amorphous carbon film) as a protective film,and a film forming chamber which used a CVD method may be disposedseparately.

Then, a substrate, on which a light emitting device was formed, istransferred from the transfer chamber 1004 a to the hand-over chamber1011, without contact with atmospheric air, and further, transferredfrom the hand-over chamber 1011 to the transfer chamber 1014. Then, thesubstrate, on which a light emitting device was formed, is transferredfrom the transfer chamber 1014 to the sealing chamber 1016.

A seal substrate is set from outside to the load chamber 1017, andprepared. In passing, in order to remove an impurity such as moisture,it is preferable to carry out anneal in advance in vacuum. And, in caseof forming a seal member for gluing the substrate on which a lightemitting device was formed with the seal substrate, the seal member isformed in the sealing chamber, and the seal substrate, on which the sealmember was formed, is transferred to the seal substrate stock chamber1030. In passing, in the sealing chamber 1018, a drying agent may bedisposed on the seal substrate. In passing, here, an example, in whichthe seal member was formed on the seal substrate, was shown, but inparticular, it is not restrictive, and the seal member may be formed onthe substrate on which a light emitting device was formed.

Then, the sealing chamber 1016, the substrate and the seal substrate areglued together, and UV rays are irradiated to a pair of the gluedsubstrates by a ultraviolet ray irradiating mechanism which was disposedin the sealing chamber 1016, to cure the seal member. In passing, here,as the seal member, ultraviolet ray cured resin was used, but if it isan adhesive agent, it is not particularly restrictive.

Then, the pair of glued substrates are transferred from the sealingchamber 1016 to the transfer chamber 1014, and then, from the transferchamber 1014 to the pull-out chamber 1019, and then, pulled out.

As above, by using the manufacturing apparatus shown in FIG. 14, until alight emitting device is completely sealed in a hermetically enclosedspace, it is not needed to be exposed to atmospheric air, and therefore,it becomes possible to fabricate a light emitting apparatus with highreliability. In passing, in the transfer chambers 1014, vacuum, andnitrogen atmosphere with atmospheric pressure are repeated, but it isdesired that vacuum is maintained on a steady basis in the transferchambers 1002, 1004 a.

In passing, although it is not shown in the figure here, disposed is acontrol control apparatus for realizing automation by controlling a paththrough which the substrate is moved to an individual processingchamber.

In addition, in the manufacturing apparatus shown in FIG. 14, thesubstrate, on which a transparent conductive film (or a metal film(TiN)) was disposed as an anode, is carried in, and a layer including anorganic compound was formed, and thereafter, a transparent orsemi-transparent cathode (e.g., a laminated layer of a thin metal film(Al, Ag) and a transparent conductive film) is formed, and thereby, itis also possible to form a upper surface launching type light emittingdevice.

In addition, in the manufacturing apparatus shown in FIG. 14, thesubstrate, on which a transparent conductive film was formed as ananode, is transferred, and after a layer including an organic compoundwas formed, a cathode, which comprises a metal film (Al, Ag), is formed,and thereby, it is also possible to form a lower surface launching typelight emitting device.

In addition, it is possible to freely combine this embodiment with anyone of the embodiment modes 1 through 4, the embodiment 1.

INDUSTRIAL APPLICABILITY

According to this invention, it is possible to form a high-densityorganic compound layer, by carrying out deposition of an organiccompound film over introducing material gas, and by having a componentof the material gas included in the organic compound film, and bycarrying out film formation up to a desired film thickness. According tothis invention, by intentionally introducing material gas at the time offilm formation, a high-density film is realized, and an impurity such asoxygen and moisture, which causes deterioration, is blocked from beingintruded, or diffused in a film.

1. A film forming apparatus which evaporates an organic compound material from an evaporation source which was placed opposite to a substrate, to carry out film formation over said substrate, and the film forming apparatus characterized in that, in a film forming chamber in which said substrate is placed, a deposition source which accommodates the organic compound material and means for heating the deposition source are provided, and said film forming chamber is coupled to a vacuum pumping processing chamber which vacuates an inside of said film forming chamber, and has means which can introduce material gas.
 2. A manufacturing apparatus which has a load chamber, a transfer chamber which was coupled to the load chamber, and a film forming chamber which was coupled to the transfer chamber, and the manufacturing apparatus characterized in that said transfer chamber has a function of carrying out alignment of a mask and a substrate, and in the film forming chamber in which said substrate is placed, a deposition source which accommodates an organic compound material and means for heating the deposition source are provided, and said film forming chamber is coupled to a vacuum pumping processing chamber which vacuates an inside of said film forming chamber, and has means which can introduce material gas.
 3. The manufacturing apparatus as set forth in claim 1, characterized in that said deposition source is movable in a X direction or a Y direction in the film forming chamber.
 4. The manufacturing apparatus as set forth in claim 1, characterized in that, in said film forming chamber, means for heating said substrate is provided.
 5. The manufacturing apparatus as set forth in claim 1, characterized in that said means which can introduce material gas is means which introduces radicalized material gas by plasma generating means.
 6. The manufacturing apparatus as set forth in claim 1, characterized in that said material gas is one kind or plural kinds which were selected from monosilane, disilane, trisilane, SiF₄, GeH₄, GeF₄, SnH₄, CH₄, C₂H₂, C₂H₄, or C₆H₆.
 7. A film forming method for having an organic compound deposited over a substrate which was placed in a film forming chamber, and the film forming method characterized in that, on the occasion that an inside of said film forming chamber is made to be of higher pressure than 1×10⁻³ Torr, and a film is formed over said substrate by having an organic compound material deposited from a deposition source which was placed opposite to the substrate, material gas is introduced into said film forming chamber at the same time.
 8. A film forming method for having an organic compound deposited over a substrate which was placed in a film forming chamber, and the film forming method characterized in that, on the occasion that an inside of said film forming chamber is made to be of higher pressure than 1×10⁻³ Torr, and a film is formed over said substrate by having an organic compound material deposited from a deposition source which was placed opposite to the substrate, radicalized material gas is introduced into said film forming chamber at the same time.
 9. The film forming method as set forth in claim 7, characterized in that said material gas is one kind or plural kinds which were selected from monosilane, disilane, trisilane, SiF₄, GeH₄, GeF₄, SnH₄, CH₄, C₂H₂, C₂H₄, or C₆H₆.
 10. A film forming method for having an organic compound deposited over a substrate which was placed in a film forming chamber, and the film forming method characterized in that, on the occasion that an inside of said film forming chamber is made to be of higher pressure than 1×10⁻³ Torr, and a film is formed over said substrate by having an organic compound material deposited from a deposition source which was placed opposite to the substrate, ionized material is evaporated by plasma at the same time, and over chemically attaching with said organic compound material, film formation is carried out over the substrate.
 11. A cleaning method for removing an organic compound attached in a film forming chamber which had a deposition source, and the cleaning method characterized in that, by generating plasma in the film forming chamber, or by introducing gas, which was ionized by plasma, into the film forming chamber, an inner wall, or anti-attachment preventing means for preventing a film from being formed over the inner wall, or a mask, is cleaned, and by vacuum pumping means, air is discharged.
 12. The cleaning method as set forth in claim 11, characterized in that said plasma is generated by exciting one kind or plural kinds of gasses which were selected from Ar, H, F, NF₃, or O.
 13. The manufacturing apparatus as set forth in claim 2, characterized in that said deposition source is movable in a X direction or a Y direction in the film forming chamber.
 14. The manufacturing apparatus as set forth in claim 2, characterized in that, in said film forming chamber, means for heating said substrate is provided.
 15. The manufacturing apparatus as set forth in claim 3, characterized in that, in said film forming chamber, means for heating said substrate is provided.
 16. The manufacturing apparatus as set forth in claim 13, characterized in that, in said film forming chamber, means for heating said substrate is provided.
 17. The manufacturing apparatus as set forth in claim 2, characterized in that said means which can introduce material gas is means which introduces radicalized material gas by plasma generating means.
 18. The manufacturing apparatus as set forth in claim 3, characterized in that said means which can introduce material gas is means which introduces radicalized material gas by plasma generating means.
 19. The manufacturing apparatus as set forth in claim 4, characterized in that said means which can introduce material gas is means which introduces radicalized material gas by plasma generating means.
 20. The manufacturing apparatus as set forth in claim 13, characterized in that said means which can introduce material gas is means which introduces radicalized material gas by plasma generating means.
 21. The manufacturing apparatus as set forth in claim 2, characterized in that said material gas is one kind or plural kinds which were selected from monosilane, disilane, trisilane, SiF₄, GeH₄, GeF₄, SnH₄, CH₄, C₂H₂, C₂H₄, or C₆H₆.
 22. The manufacturing apparatus as set forth in claim 3, characterized in that said material gas is one kind or plural kinds which were selected from monosilane, disilane, trisilane, SiF₄, GeH₄, GeF₄, SnH₄, CH₄, C₂H₂, C₂H₄, or C₆H₆.
 23. The manufacturing apparatus as set forth in claim 4, characterized in that said material gas is one kind or plural kinds which were selected from monosilane, disilane, trisilane, SiF₄, GeH₄, GeF₄, SnH₄, CH₄, C₂H₂, C₂H₄, or C₆H₆.
 24. The manufacturing apparatus as set forth in claim 13, characterized in that said material gas is one kind or plural kinds which were selected from monosilane, disilane, trisilane, SiF₄, GeH₄, GeF₄, SnH₄, CH₄, C₂H₂, C₂ H₄, or C₆H₆.
 25. The film forming method as set forth in claim 8, characterized in that said material gas is one kind or plural kinds which were selected from monosilane, disilane, trisilane, SiF₄, GeH₄, GeF₄, SnH₄, CH₄, C₂H₂, C₂H₄, or C₆H₆. 